Two-dimensional growth of Al films on Si(111)-7 x 7 at low-temperature
文献类型：期刊论文
| 作者 | Liu, H ; Zhang, YF ; Wang, DY ; Pan, MH ; Jia, JF ; Xue, QK |
| 刊名 | SURFACE SCIENCE
 |
| 出版日期 | 2004 |
| 卷号 | 571期号:1-3页码:5 |
| 关键词 | BY-LAYER GROWTH SCANNING-TUNNELING-MICROSCOPY ENERGY-ELECTRON-DIFFRACTION EPITAXIAL-GROWTH HOMOEPITAXIAL GROWTH SELF-DIFFUSION AG ISLANDS SURFACES NUCLEATION AL(111) |
| ISSN号 | 0039-6028 |
| 通讯作者 | Liu, H (reprint author), Chinese Acad Sci, State Key Lab Surface Phys, Inst Phys, ZhongGuanCun S 3rd 8,POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Morphology and structure of the AI(111) films, grown on Si(111)-7 x 7 surface at both low (145 K) and room temperature, are investigated by in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). In the low-temperature case, a well-defined critical thickness of 4ML, at which atomically flat Al films with remarkable stability form, is identified. The formation of the flat film at the critical thickness completes the Al/Si(111) interface, and results in a subsequent homoepitaxial-like layer-by-layer growth for the entire Al coverages studied. The results are consistent with the formation of the quantum well states (QWS) recently observed in this system, and typify another intriguing example of quantized electronic states in tailoring thin film growth. (C) 2004 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46257]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, H,Zhang, YF,Wang, DY,et al. Two-dimensional growth of Al films on Si(111)-7 x 7 at low-temperature[J]. SURFACE SCIENCE,2004,571(1-3):5. |
| APA | Liu, H,Zhang, YF,Wang, DY,Pan, MH,Jia, JF,&Xue, QK.(2004).Two-dimensional growth of Al films on Si(111)-7 x 7 at low-temperature.SURFACE SCIENCE,571(1-3),5. |
| MLA | Liu, H,et al."Two-dimensional growth of Al films on Si(111)-7 x 7 at low-temperature".SURFACE SCIENCE 571.1-3(2004):5. |
入库方式： OAI收割
来源：物理研究所
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