Two-step growth of MgO films on sapphire(0001) substrates by radio frequency plasma-assisted molecular beam epitaxy
文献类型：期刊论文
| 作者 | Mei, ZX ; Du, XL ; Zeng, ZQ ; Guo, Y ; Wang, J ; Jia, JF ; Xue, QK |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2004 |
| 卷号 | 21期号:2页码:410 |
| 关键词 | POLAR OXIDE SURFACES MGXZN1-XO ALLOY |
| ISSN号 | 0256-307X |
| 通讯作者 | Du, XL (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Sci, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | We report on the growth of rock salt MgO films on sapphire (0001) substrates by rf plasma-assisted molecular beam epitaxy. A two-step method, i.e. high temperature epilayer growth after low-temperature buffer layer growth, was adopted to obtain the single crystal MgO film. The epitaxial orientation between the MgO epilayer and the sapphire (0001) substrate was studied by using in situ reflection high energy electron diffraction and ex situ x-ray diffraction, and it is found that the MgO Elm grows with [111] orientation. The role of the low temperature buffer layer in the improvement of crystal quality of the MgO epilayer is discussed based on the cross-sectional scanning electron microscopy. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46288]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Mei, ZX,Du, XL,Zeng, ZQ,et al. Two-step growth of MgO films on sapphire(0001) substrates by radio frequency plasma-assisted molecular beam epitaxy[J]. CHINESE PHYSICS LETTERS,2004,21(2):410. |
| APA | Mei, ZX.,Du, XL.,Zeng, ZQ.,Guo, Y.,Wang, J.,...&Xue, QK.(2004).Two-step growth of MgO films on sapphire(0001) substrates by radio frequency plasma-assisted molecular beam epitaxy.CHINESE PHYSICS LETTERS,21(2),410. |
| MLA | Mei, ZX,et al."Two-step growth of MgO films on sapphire(0001) substrates by radio frequency plasma-assisted molecular beam epitaxy".CHINESE PHYSICS LETTERS 21.2(2004):410. |
入库方式： OAI收割
来源：物理研究所
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