Ultrafast and high-sensitivity photovoltaic effects in TiN/Si Schottky junction
文献类型：期刊论文
| 作者 | Xing, J ; Jin, KJ ; He, M ; Lu, HB ; Liu, GZ ; Yang, GZ |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2008 |
| 卷号 | 41期号:19 |
| 关键词 | NITRIDE THIN-FILMS TITANIUM NITRIDE ELECTRONIC-PROPERTIES EPITAXIAL-GROWTH SILICON DETECTORS SI DEPOSITION CONTACTS |
| ISSN号 | 0022-3727 |
| 通讯作者 | Lu, HB (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | Ultrafast photovoltaic effects with high sensitivity in both vertical and lateral directions have been observed in the TiN/Si Schottky junction. The open-circuit vertical photovoltage across the junction is 400mV under irradiation of an HeNe laser with a power of 7mW. The response speed is in the picosecond order. Furthermore, we found a large lateral photovoltage (LPV) parallel to the plane of the junction. The LPV between the two electrodes on the Si substrate of the junction depends linearly on the position of the incident laser spot. And the highest position sensitivity is 60 mV mm(-1) over the displacement of the laser spot. These characteristics indicate the potential applications of the TiN/Si junction in photodetectors and position sensitive detectors. |
| 收录类别 | SCI |
| 资助信息 | National Basic Research Programme of China; National Natural Science Foundation of China |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46303]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xing, J,Jin, KJ,He, M,et al. Ultrafast and high-sensitivity photovoltaic effects in TiN/Si Schottky junction[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2008,41(19). |
| APA | Xing, J,Jin, KJ,He, M,Lu, HB,Liu, GZ,&Yang, GZ.(2008).Ultrafast and high-sensitivity photovoltaic effects in TiN/Si Schottky junction.JOURNAL OF PHYSICS D-APPLIED PHYSICS,41(19). |
| MLA | Xing, J,et al."Ultrafast and high-sensitivity photovoltaic effects in TiN/Si Schottky junction".JOURNAL OF PHYSICS D-APPLIED PHYSICS 41.19(2008). |
入库方式： OAI收割
来源：物理研究所
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