Ultrafast carrier dynamics in Au/GaAs interfaces studied by terahertz emission spectroscopy
文献类型：期刊论文
| 作者 | Shi, YL ; Yang, YP ; Xu, XL ; Ma, SH ; Yan, W ; Wang, L |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2006 |
| 卷号 | 88期号:16 |
| 关键词 | SEMICONDUCTOR SURFACES FIELD GAAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Shi, YL (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The measurements of optically generated terahertz emission from Au/GaAs interfaces are investigated in detail. We observe that, under high laser power excitation, terahertz signals from bare GaAs wafers and Au/GaAs samples exhibit an opposite polarity. The polarity-flip behaviors are also observed in temperature-dependent and femtosecond pump-generation studies of the Au/GaAs interfaces. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46305]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shi, YL,Yang, YP,Xu, XL,et al. Ultrafast carrier dynamics in Au/GaAs interfaces studied by terahertz emission spectroscopy[J]. APPLIED PHYSICS LETTERS,2006,88(16). |
| APA | Shi, YL,Yang, YP,Xu, XL,Ma, SH,Yan, W,&Wang, L.(2006).Ultrafast carrier dynamics in Au/GaAs interfaces studied by terahertz emission spectroscopy.APPLIED PHYSICS LETTERS,88(16). |
| MLA | Shi, YL,et al."Ultrafast carrier dynamics in Au/GaAs interfaces studied by terahertz emission spectroscopy".APPLIED PHYSICS LETTERS 88.16(2006). |
入库方式： OAI收割
来源：物理研究所
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