Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers
文献类型：期刊论文
| 作者 | Zhang, MH ; Huang, Q ; Zhang, YF ; Zhou, JM ; Li, Q ; Xu, ZY |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1999 |
| 卷号 | 75期号:10页码:1366 |
| 关键词 | MOLECULAR-BEAM EPITAXY GAAS LAYERS DEPENDENCE LIFETIME |
| ISSN号 | 0003-6951 |
| 通讯作者 | Zhang, MH (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | At a medium substrate temperature of 400 degrees C and a lower As flux, we have grown an ultrafast AlGaAs/GaAs photorefractive multiple quantum well (MQW) structure by molecular beam epitaxy. The as-grown sample exhibits strong photorefractive effect under the transverse Frantz-Keldysh geometry. A peak electroabsorption of 2100 cm(-1) is measured in the as-grown sample in an 11 kV/cm dc electric field, and the peak photorefractive diffraction efficiency can be 1.2%. After postgrowth annealing, the photorefractive effect becomes weak and disappears in samples annealed above 700 degrees C. Using optical transient current spectroscopy, deep levels are measured in these samples. It is found that deep levels are stable against annealing until 700 degrees C. Using a pump-probe technique, carrier lifetimes are measured at room temperature. We find that the as-grown sample has a lifetime of 20 ps, while the 700 degrees C annealed sample has a lifetime of more than 200 ps. The ultrafast lifetime in the as-grown sample is caused by point defects, not by As clusters. Our result show that AlGaAs/GaAs MQW structure grown around 400 degrees C has better performance of the photorefractive effect. (C) 1999 American Institute of Physics. [S0003-6951(99)04036-X]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46313]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, MH,Huang, Q,Zhang, YF,et al. Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers[J]. APPLIED PHYSICS LETTERS,1999,75(10):1366. |
| APA | Zhang, MH,Huang, Q,Zhang, YF,Zhou, JM,Li, Q,&Xu, ZY.(1999).Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers.APPLIED PHYSICS LETTERS,75(10),1366. |
| MLA | Zhang, MH,et al."Ultrafast low-temperature grown AlGaAs/GaAs photorefractive quantum wells using point defects as capture centers".APPLIED PHYSICS LETTERS 75.10(1999):1366. |
入库方式： OAI收割
来源：物理研究所
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