Ultrahigh data density storage with scanning tunneling microscopy
文献类型：期刊论文
| 作者 | Gao, HJ ; Shi, DX ; Zhang, HX ; Lin, X |
| 刊名 | CHINESE PHYSICS
 |
| 出版日期 | 2001 |
| 卷号 | 10页码:S179 |
| 关键词 | COMPLEX THIN-FILM NANOMETER-SCALE ORGANIC-COMPLEX ELECTRICAL BISTABILITY CHARGE LITHOGRAPHY TRANSISTORS DEPOSITION POLYMERS SURFACES |
| ISSN号 | 1009-1963 |
| 通讯作者 | Gao, HJ (reprint author), Chinese Acad Sci, Beijing Lab Vacuum Phys, Inst Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | Ultrahigh density data storage devices made by scanning probe techniques based on various recording media and their corresponding recording mechanisms, have attracted much attention recently, since they ensure a high data density in a non-volatile, erasable form in some kinds of ways. It is of particular interest to employ organic polymers with novel functional properties within a single molecule (or a single molecular complex) for fabricating electronic devices on a single molecular scale. Here, it is reported that a new process for ultrahigh density and erasable data storage, namely, molecular bistability on an organic charge transfer complex of 3-nitrobenzal malononitrile and 1,4-phenylenediamine (NBMN-pDA) switched by a scanning tunneling microscope (STM). Data density exceeds 10(13) bits/cm(2) with a writing time per bit of similar to1 mus. Current-voltage (I/V) measurements before and after the voltage pulse from the STM tip, together with optical absorption spectroscopy and macroscopic four-probe I/V measurements demonstrate that the writing mechanism is conductance transition in the organic complex. This mechanism offers an attractive combination of ultrahigh data density coupled with high speed. The ultimate bit density achievable appears to be limited only by the size of the organic complex, which is less than 1mn in our case, corresponding to 10(14) bits/cm(2). We believe that provided the lifetime can be improved, molecular bistability may represent a practical route for ultrahigh density data storage devices. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46329]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gao, HJ,Shi, DX,Zhang, HX,et al. Ultrahigh data density storage with scanning tunneling microscopy[J]. CHINESE PHYSICS,2001,10:S179. |
| APA | Gao, HJ,Shi, DX,Zhang, HX,&Lin, X.(2001).Ultrahigh data density storage with scanning tunneling microscopy.CHINESE PHYSICS,10,S179. |
| MLA | Gao, HJ,et al."Ultrahigh data density storage with scanning tunneling microscopy".CHINESE PHYSICS 10(2001):S179. |
入库方式： OAI收割
来源：物理研究所
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