Ultra-high-density Ge quantum dots on insulator prepared by high-vacuum electron-beam evaporation
文献类型：期刊论文
| 作者 | Wan, Q ; Wang, TH ; Liu, WL ; Lin, CL |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2003 |
| 卷号 | 249期号:1-2页码:23 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION SILICON NANOCRYSTALS SI NANOCRYSTALS MATRIX PHOTOLUMINESCENCE SIO2-FILMS GROWTH LUMINESCENCE FABRICATION SI(001) |
| ISSN号 | 0022-0248 |
| 通讯作者 | Wan, Q (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. |
| 中文摘要 | Quaternary InAlGaN film has been grown directly on top of low-temperature-deposited GaN buffer layer by low-pressure metalorganic vapor phase epitaxy. High-resolution X-ray diffraction and photoluminescence (PL) results show that the film has good crystal quality and optical property. Temperature-dependent PL and time-resolved PL (TRPL) have been employed to study the carriers recombination dynamics in the film. The TRPL signals can be well fitted as a stretched exponential function exp[-(t/tau)(beta)] from 14 to 250 K, indicating that the emission is attributed to the radiative recombination of excitons localized in disorder quantum nanostructures such as quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-sectional high-resolution electron microscopy measurement further proves that there exist the disorder quantum nanostructures in the quaternary. By investigating the dependence of the exponential parameter beta on the temperature, it is shown that the multiple trapping-detrapping mechanism dominates the diffusion among the localized states. The localized states are considered to have two-dimensional density of states (DOS) at 250 K, since radiative recombination lifetime tau(r) increases linearly with increasing temperature. (C) 2002 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46337]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wan, Q,Wang, TH,Liu, WL,et al. Ultra-high-density Ge quantum dots on insulator prepared by high-vacuum electron-beam evaporation[J]. JOURNAL OF CRYSTAL GROWTH,2003,249(1-2):23. |
| APA | Wan, Q,Wang, TH,Liu, WL,&Lin, CL.(2003).Ultra-high-density Ge quantum dots on insulator prepared by high-vacuum electron-beam evaporation.JOURNAL OF CRYSTAL GROWTH,249(1-2),23. |
| MLA | Wan, Q,et al."Ultra-high-density Ge quantum dots on insulator prepared by high-vacuum electron-beam evaporation".JOURNAL OF CRYSTAL GROWTH 249.1-2(2003):23. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。