Understanding the intermediate initial state in TiO2-delta/La2/3Sr1/3MnO3 stack-based bipolar resistive switching devices
文献类型：期刊论文
| 作者 | Chen, YS ; Chen, B ; Gao, B ; Chen, LP ; Lian, GJ ; Liu, LF ; Wang, Y ; Liu, XY ; Kang, JF |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 99期号:7 |
| 关键词 | CURRENT-VOLTAGE CHARACTERISTICS RESISTANCE FILMS MEMORIES |
| ISSN号 | 0003-6951 |
| 通讯作者 | Chen, YS (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. |
| 中文摘要 | Bipolar resistive switching (RS) behavior was observed in epitaxially deposited TiO2-delta/La2/3Sr1/3MnO3 stacks. An intermediate initial state of this device demonstrated that the original resistive state would switch to either the higher or the lower state, depending only on the electrical polarity of the initial measurement. As the analogue intermediate states were obtained by device fabrication, the direct observation of these switching states was possible, knowing the microscopic physical origin of the RS effect. Based on x-ray photoelectron spectroscopy analysis, an understanding of this interesting phenomenon was proposed, well supporting the oxygen vacancy formation and recombination mechanism. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626597] |
| 收录类别 | SCI |
| 资助信息 | NSFC; China Postdoctoral Science Foundation [2010CB934203, 61006009, 20090460135] |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46402]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, YS,Chen, B,Gao, B,et al. Understanding the intermediate initial state in TiO2-delta/La2/3Sr1/3MnO3 stack-based bipolar resistive switching devices[J]. APPLIED PHYSICS LETTERS,2011,99(7). |
| APA | Chen, YS.,Chen, B.,Gao, B.,Chen, LP.,Lian, GJ.,...&Kang, JF.(2011).Understanding the intermediate initial state in TiO2-delta/La2/3Sr1/3MnO3 stack-based bipolar resistive switching devices.APPLIED PHYSICS LETTERS,99(7). |
| MLA | Chen, YS,et al."Understanding the intermediate initial state in TiO2-delta/La2/3Sr1/3MnO3 stack-based bipolar resistive switching devices".APPLIED PHYSICS LETTERS 99.7(2011). |
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来源：物理研究所
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