Unit-cell by unit-cell homoepitaxial growth using atomically flat SrTiO3(001) substrates and pulsed laser deposition
文献类型：期刊论文
| 作者 | Fei, YY ; Wang, X ; Lu, HB ; Yang, GZ ; Zhu, XD |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:4页码:1002 |
| 关键词 | MOLECULAR-BEAM EPITAXY ELECTRON-DIFFRACTION OSCILLATIONS THIN-FILMS SURFACE OXIDES |
| ISSN号 | 0256-307X |
| 通讯作者 | Zhu, XD (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | In-x Ga1-xN/GaN multiple quantum well (MQW) samples with strain-layer thickness lager/less than the critical one are investigated by temperature-dependent photoluminescence and transmission electron microscopy, and double crystal x-ray diffraction. For the sample with the strained-layer thickness greater than the critical thickness, we observe a high density of threading dislocations generated at the MQW layers and extended to the cap layer. These dislocations result from relaxation of the strain layer when its thickness is beyond the critical thickness. For the sample with the strained-layer thickness greater than the critical thickness, temperature-dependent photoluminescence measurements give evidence that dislocations generated from the MQW layers due to strain relaxation are main reason of the poor photoluminescence property, and the dominating status change of the main peak with increasing temperature is attributed to the change of the radiative recombination from the areas including dislocations to the ones excluding dislocations. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46422]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Fei, YY,Wang, X,Lu, HB,et al. Unit-cell by unit-cell homoepitaxial growth using atomically flat SrTiO3(001) substrates and pulsed laser deposition[J]. CHINESE PHYSICS LETTERS,2005,22(4):1002. |
| APA | Fei, YY,Wang, X,Lu, HB,Yang, GZ,&Zhu, XD.(2005).Unit-cell by unit-cell homoepitaxial growth using atomically flat SrTiO3(001) substrates and pulsed laser deposition.CHINESE PHYSICS LETTERS,22(4),1002. |
| MLA | Fei, YY,et al."Unit-cell by unit-cell homoepitaxial growth using atomically flat SrTiO3(001) substrates and pulsed laser deposition".CHINESE PHYSICS LETTERS 22.4(2005):1002. |
入库方式： OAI收割
来源：物理研究所
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