Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films
文献类型：期刊论文
| 作者 | Xu, ZT ; Jin, KJ ; Wang, C ; Lu, HB ; Wang, C ; Wang, L ; Yang, GZ |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2011 |
| 卷号 | 105期号:1页码:149 |
| 关键词 | MEMORY APPLICATIONS OXIDE ELECTRORESISTANCE MANGANITES RESISTANCE INTERFACE PHYSICS |
| ISSN号 | 0947-8396 |
| 通讯作者 | Jin, KJ (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | The hysteretic and reversible resistive-switching effect was observed in La0.7Sr0.3MnO3 films at room temperature. The resistive switching was found to be most obvious in films fabricated at 30 Pa oxygen pressure, and more distinct in films fabricated on SrTiO3 substrates than those fabricated on LaAlO3 substrates. Moreover, La0.7Sr0.3MnO3 films fabricated at a certain oxygen pressure with indium electrodes showed double '8' type current-voltage loops. Some of the results are explained by considering the influence of the interface effect, electrodes and oxygen vacancies, but the mechanism of the double '8' type current-voltage loops remains an open question. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China; National Basic Research Program of China |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46444]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, ZT,Jin, KJ,Wang, C,et al. Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,105(1):149. |
| APA | Xu, ZT.,Jin, KJ.,Wang, C.,Lu, HB.,Wang, C.,...&Yang, GZ.(2011).Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,105(1),149. |
| MLA | Xu, ZT,et al."Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 105.1(2011):149. |
入库方式： OAI收割
来源：物理研究所
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