Upper critical field and Raman spectra of MgB2 thin films irradiated with low energy oxygen ion
文献类型：期刊论文
| 作者 | Wang, J ; Zhuang, CG ; Li, J ; Wang, Z ; Feng, QR ; Zheng, DN |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2009 |
| 卷号 | 106期号:9 |
| 关键词 | SUPERCONDUCTING MGB2 ANISOTROPY BORON |
| ISSN号 | 0021-8979 |
| 通讯作者 | Wang, J (reprint author), Chinese Acad Sci, Natl Lab Supercond, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | The structure, upper critical field, and Raman spectrum of epitaxial MgB2 thin films irradiated by 300 keV O-2(+) ions have been investigated. Lattice parameter c expands after irradiation. There is a significant increase in upper critical field in the moderately irradiated films, while the critical temperature is reduced slightly. The values of critical field at zero temperature exhibit a maximum for samples with a moderate irradiation level for the applied magnetic field both perpendicular and parallel to the film Surface. The temperature dependence of the anisotropy parameter, which is defined as the ratio of the upper critical field with the field parallel to the film surface and perpendicular to the film surface, reveals that oxygen ion irradiation mainly affects the sigma band at a low irradiation level. With increasing irradiation level, pi band scattering is strongly enhanced, and finally both bands are in the dirty limit. A broad peak centered around 570 cm(-1) is observed in the Raman spectrum of the unirradiated films, and the peak position has a visible redshift in the irradiated samples. In particular, high-frequency spectral structures appear and become dominant, while the E-2g broad band diminishes gradually with increasing irradiation fluence The results are discussed by considering the disorder-induced change in carrier scattering within and between the sigma and pi bands and a violation of the Raman selection rules due to oxygen ion irradiation. (C) 2009 American Institute of Physics. [doi: 10.1063/1 3256154] |
| 收录类别 | SCI |
| 资助信息 | Ministry of Science and Technology of China; National Natural Science Foundation of China [50572001, 10534060] |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46452]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, J,Zhuang, CG,Li, J,et al. Upper critical field and Raman spectra of MgB2 thin films irradiated with low energy oxygen ion[J]. JOURNAL OF APPLIED PHYSICS,2009,106(9). |
| APA | Wang, J,Zhuang, CG,Li, J,Wang, Z,Feng, QR,&Zheng, DN.(2009).Upper critical field and Raman spectra of MgB2 thin films irradiated with low energy oxygen ion.JOURNAL OF APPLIED PHYSICS,106(9). |
| MLA | Wang, J,et al."Upper critical field and Raman spectra of MgB2 thin films irradiated with low energy oxygen ion".JOURNAL OF APPLIED PHYSICS 106.9(2009). |
入库方式： OAI收割
来源：物理研究所
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