中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Valence electronic structure of tantalum carbide and nitride

文献类型:期刊论文

作者Fan, CZ ; Sun, LL ; Wei, ZJ ; Ma, MZ ; Liu, RP ; Zeng, SY ; Wang, WK
刊名SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY
出版日期2007
卷号50期号:6页码:737
ISSN号1672-1799
中文摘要The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.
收录类别SCI
公开日期2013-09-23
源URL[http://ir.iphy.ac.cn/handle/311004/46486]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Fan, CZ,Sun, LL,Wei, ZJ,et al. Valence electronic structure of tantalum carbide and nitride[J]. SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY,2007,50(6):737.
APA Fan, CZ.,Sun, LL.,Wei, ZJ.,Ma, MZ.,Liu, RP.,...&Wang, WK.(2007).Valence electronic structure of tantalum carbide and nitride.SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY,50(6),737.
MLA Fan, CZ,et al."Valence electronic structure of tantalum carbide and nitride".SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY 50.6(2007):737.

入库方式: OAI收割

来源:物理研究所

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