中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Vanadium bound exciton luminescence in 6H-SiC

文献类型:期刊论文

作者Wang, SC ; Wang, G ; Liu, Y ; Jiang, LB ; Wang, WJ ; Chen, XL
刊名APPLIED PHYSICS LETTERS
出版日期2012
卷号101期号:15
关键词SILICON-CARBIDE SINGLE SPINS PHOTOLUMINESCENCE DEFECT 4H RADIATION BAND VACANCIES
ISSN号0003-6951
通讯作者Wang, SC (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Res & Dev Ctr Funct Crystals, Beijing 100190, Peoples R China.
中文摘要Polarization-modulated resistive switching and fatigue behaviors of the Ag/La0.1Bi0.9FeO3/La0.7Sr0.3MnO3 capacitors have been investigated. The device resistance is found to show a V-shaped dependence on poling voltage, and the lowest resistance appears at the voltage corresponding to the coercive field of La0.1Bi0.9FeO3. Based on this relation, three distinct resistance states can be achieved by applying appropriate pulse trains, which manifests a potential application in high-density storage technology. The fatigue properties of the sample under repeated bipolar or unipolar pulses were further analyzed. Bipolar pulses enhance the rectifying characters of the current-voltage relation, whereas unipolar pulses produce a reverse effect. Based on impedance analysis, we propose the formation of leakage paths along conductive domain walls, and it is the domain reconstruction during repeated polarization flipping that results in the complex transport behavior observed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757987]
收录类别SCI
资助信息National Natural Science Foundation of China [51072222, 90922037, 50972161]; Beijing Nova Program [2011096]; Key Laboratory of Optoelectronic Materials Chemistry and Physics, CAS [2010KL009]
语种英语
公开日期2013-09-23
源URL[http://ir.iphy.ac.cn/handle/311004/46497]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wang, SC,Wang, G,Liu, Y,et al. Vanadium bound exciton luminescence in 6H-SiC[J]. APPLIED PHYSICS LETTERS,2012,101(15).
APA Wang, SC,Wang, G,Liu, Y,Jiang, LB,Wang, WJ,&Chen, XL.(2012).Vanadium bound exciton luminescence in 6H-SiC.APPLIED PHYSICS LETTERS,101(15).
MLA Wang, SC,et al."Vanadium bound exciton luminescence in 6H-SiC".APPLIED PHYSICS LETTERS 101.15(2012).

入库方式: OAI收割

来源:物理研究所

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