中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites

文献类型:期刊论文

作者Liu, HB ; Xie, SS ; Cheng, GS
刊名CRYSTENGCOMM
出版日期2011
卷号13期号:11页码:3649
关键词SELECTIVE-AREA GROWTH FUNDAMENTAL-BAND GAP NANOWIRE GROWTH INN EMISSION PHOTOLUMINESCENCE SURFACE
ISSN号1466-8033
通讯作者Cheng, GS (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China.
中文摘要Indium nitride crystallites were grown via combination of vapor-liquid-solid (VLS) and vapor-solid (VS) growth mechanisms using Au nanoparticles as catalysts. A surface diffusion model was proposed to interpret the formation mechanism of the InN crystallites. Facets of InN crystallites were tunable with variation of NH(3) flux.
收录类别SCI
资助信息National Natural Science Foundation of China [10834004]; Natural Science Foundation of Jiangsu Province of China [BK2008176]; Chinese Academy of Sciences
语种英语
公开日期2013-09-23
源URL[http://ir.iphy.ac.cn/handle/311004/46500]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Liu, HB,Xie, SS,Cheng, GS. Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites[J]. CRYSTENGCOMM,2011,13(11):3649.
APA Liu, HB,Xie, SS,&Cheng, GS.(2011).Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites.CRYSTENGCOMM,13(11),3649.
MLA Liu, HB,et al."Vapor-liquid-solid meets vapor-solid growth mechanism for fabricating high quality indium nitride crystallites".CRYSTENGCOMM 13.11(2011):3649.

入库方式: OAI收割

来源:物理研究所

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