Vapour-phase graphene epitaxy at low temperatures
文献类型：期刊论文
| 作者 | Zhang, LC ; Shi, ZW ; Liu, DH ; Yang, R ; Shi, DX ; Zhang, GY |
| 刊名 | NANO RESEARCH
 |
| 出版日期 | 2012 |
| 卷号 | 5期号:4页码:258 |
| 关键词 | LARGE-AREA FILMS GRAPHITE OXIDE TRANSPARENT EXFOLIATION DEPOSITION SHEETS LAYERS |
| ISSN号 | 1998-0124 |
| 通讯作者 | Zhang, GY (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We report an epitaxial growth of graphene, including homo- and hetero-epitaxy on graphite and SiC substrates, at a temperature as low as similar to 540 A degrees C. This vapour-phase epitaxial growth, carried out in a remote plasma-enhanced chemical vapor deposition (RPECVD) system using methane as the carbon source, can yield large-area high-quality graphene with the desired number of layers over the entire substrate surfaces following an AB-stacking layer-by-layer growth model. We also developed a facile transfer method to transfer a typical continuous one layer epitaxial graphene with second layer graphene islands on top of the first layer with the coverage of the second layer graphene islands being 20% (1.2 layer epitaxial graphene) from a SiC substrate onto SiO2 and measured the resistivity, carrier density and mobility. Our work provides a new strategy toward the growth of graphene and broadens its prospects of application in future electronics. |
| 收录类别 | SCI |
| 资助信息 | CAS; National 973 Project of China [2012CB921302]; National Science Foundation of China (NSFC) [11174333, 11074288, 10974226] |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46501]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, LC,Shi, ZW,Liu, DH,et al. Vapour-phase graphene epitaxy at low temperatures[J]. NANO RESEARCH,2012,5(4):258. |
| APA | Zhang, LC,Shi, ZW,Liu, DH,Yang, R,Shi, DX,&Zhang, GY.(2012).Vapour-phase graphene epitaxy at low temperatures.NANO RESEARCH,5(4),258. |
| MLA | Zhang, LC,et al."Vapour-phase graphene epitaxy at low temperatures".NANO RESEARCH 5.4(2012):258. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。