Vertically Aligned Boron Nitride Nanosheets: Chemical Vapor Synthesis, Ultraviolet Light Emission, and Superhydrophobicity
文献类型：期刊论文
| 作者 | Yu, J ; Qin, L ; Hao, YF ; Kuang, S ; Bai, XD ; Chong, YM ; Zhang, WJ ; Wang, E |
| 刊名 | ACS NANO
 |
| 出版日期 | 2010 |
| 卷号 | 4期号:1页码:414 |
| 关键词 | CARBON NANOWALLS ELECTRIC-FIELD BN FILMS RAMAN-SPECTROSCOPY NANOFLAKE FILMS NANOTUBES DEPOSITION GROWTH PRESSURE NANORIBBONS |
| ISSN号 | 1936-0851 |
| 通讯作者 | Yu, J (reprint author), Harbin Inst Technol, Dept Mat Sci & Engn, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China. |
| 中文摘要 | Boron nitride (BN) is a promising semiconductor with a wide band gap (similar to 6 eV). Here, we report the synthesis of vertically aligned BN nanosheets (BNNSs) on silicon substrates by microwave plasma chemical vapor deposition from a gas mixture of BF(3)-N(2)-H(2). The size, shape, thickness, density, and alignment of the BNNSs were well-controlled by appropriately changing the growth conditions, With changing the gas flow rates of BF(3) and H(2) as well as. their ratio, the BNNSs evolve from three-dimensional with branches to two-dimensional with smooth surface and their thickness changes from 20 to below 5 nm. The growth of the BNNSs rather than uniform granular films is attributed to the particular chemical properties of the gas system, mainly the strong etching effect of fluorine. The alignment of the BNNSs is possibly induced by the electrical field-generated in plasma sheath. Strong UV light emission with abroad band ranging from 200 to 400 nm and superhydrophobicity with contact angles over 150 degrees were obtained for the vertically aligned BNNSs. The present BNNSs possess the properties complementary to carbon nanosheets such as intrinsically semiconducting, high temperature stability, and high chemical inertness and may find applications in ultraviolet nanoelectronics, catalyst supports, electron field emission, and self-cleaning coatings, etc., especially those working at high temperature and in harsh environments. |
| 收录类别 | SCI |
| 资助信息 | NSFC [50572019, 50972033]; New Century Excellent Talents in University [NCET060343]; SRF; SEM; Shenzhen government |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46516]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, J,Qin, L,Hao, YF,et al. Vertically Aligned Boron Nitride Nanosheets: Chemical Vapor Synthesis, Ultraviolet Light Emission, and Superhydrophobicity[J]. ACS NANO,2010,4(1):414. |
| APA | Yu, J.,Qin, L.,Hao, YF.,Kuang, S.,Bai, XD.,...&Wang, E.(2010).Vertically Aligned Boron Nitride Nanosheets: Chemical Vapor Synthesis, Ultraviolet Light Emission, and Superhydrophobicity.ACS NANO,4(1),414. |
| MLA | Yu, J,et al."Vertically Aligned Boron Nitride Nanosheets: Chemical Vapor Synthesis, Ultraviolet Light Emission, and Superhydrophobicity".ACS NANO 4.1(2010):414. |
入库方式： OAI收割
来源：物理研究所
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