Visible light emission from innate silicon nanocrystals in an oxide matrix grown at low temperature
文献类型：期刊论文
| 作者 | Cao, ZX ; Song, R ; Ma, LB ; Du, Y ; Ji, AL ; Wang, YQ |
| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2006 |
| 卷号 | 17期号:8页码:2073 |
| 关键词 | AMORPHOUS-SILICON SI NANOCRYSTALS PHOTOLUMINESCENCE FILMS LUMINESCENCE NANOPARTICLES LAYERS |
| ISSN号 | 0957-4484 |
| 通讯作者 | Wang, YQ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Silicon nanocrystals with well-controlled sizes below 5.0 nm at a number density up to 10(12) cm(-2) were directly grown in hydrogenated silicon oxide films by plasma-enhanced chemical vapour deposition using SiH(4), O(2) and H(2) as the precursor. For the immediate formation of silicon nanocrystals in deposits on a cold substrate, high-density hydrogen ions have to be maintained in the plasma. These innate silicon nanocrystals are found to be well isolated from each other and dispersed uniformly throughout the deposits. Intense visible photoluminescence was measured at room temperature from such samples, with the photon energy at about 1.67 eV being indifferent to the variation in particle size. The photoluminescence features can find a qualitative explanation in the nearly stabilized electronic states of silicon nanocrystals by Si=O surface-passivation. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46551]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cao, ZX,Song, R,Ma, LB,et al. Visible light emission from innate silicon nanocrystals in an oxide matrix grown at low temperature[J]. NANOTECHNOLOGY,2006,17(8):2073. |
| APA | Cao, ZX,Song, R,Ma, LB,Du, Y,Ji, AL,&Wang, YQ.(2006).Visible light emission from innate silicon nanocrystals in an oxide matrix grown at low temperature.NANOTECHNOLOGY,17(8),2073. |
| MLA | Cao, ZX,et al."Visible light emission from innate silicon nanocrystals in an oxide matrix grown at low temperature".NANOTECHNOLOGY 17.8(2006):2073. |
入库方式： OAI收割
来源：物理研究所
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