Visualization of the conductive channel in a planar resistance switching device based on electrochromic materials
文献类型：期刊论文
| 作者 | Shang, DS ; Shi, L ; Sun, JR ; Shen, BG |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2012 |
| 卷号 | 111期号:5 |
| 关键词 | THIN-FILMS TUNGSTEN-OXIDE MEMORY SRTIO3 |
| ISSN号 | 0021-8979 |
| 通讯作者 | Shang, DS (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | In this work, bipolar resistance switching behavior was realized in an Au/tungsten oxide/Au planar device, and the evolution of the conductive channel during resistance switching was successfully visualized by the in situ optical image technique based on the color-conductivity dependence of tungsten oxide. We found that there are two types of conductive channel, named parabolic channel and bar-like channel, exist in the planar device. The parabolic channel formed firstly near the cathode and then extended to but could not touch the anode. By applying opposite electric-field, the bar-like channel formed from the cathode (i.e., foregoing anode) and extended to the parabolic channel. With alternating the external electric-field polarity, the bar-like channel showed an indirect connection and nonmonotonic disconnection with the parabolic channel at the region near the foregoing anode, corresponding to the high-to-low and low-to-high resistance switching processes of the planar device, respectively. The instable RS behavior was caused by the change of bar-like channel occurring position under the high external field condition. The conductive channel formation was ascribed to the sodium ion immersion from the soda-lime glass substrate into the tungsten oxide film and then migration driven by the electric field to form sodium tungsten bronze. These results will give some insight into the resistance switching property improvement and mechanism elucidation as well as a possibility to develop electric/optical-coupled switch and data storage devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691204] |
| 收录类别 | SCI |
| 资助信息 | National Basic Research of China; National Natural Science Foundation of China; Chinese Academy of Sciences; Beijing Municipal Nature Science Foundation |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46560]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shang, DS,Shi, L,Sun, JR,et al. Visualization of the conductive channel in a planar resistance switching device based on electrochromic materials[J]. JOURNAL OF APPLIED PHYSICS,2012,111(5). |
| APA | Shang, DS,Shi, L,Sun, JR,&Shen, BG.(2012).Visualization of the conductive channel in a planar resistance switching device based on electrochromic materials.JOURNAL OF APPLIED PHYSICS,111(5). |
| MLA | Shang, DS,et al."Visualization of the conductive channel in a planar resistance switching device based on electrochromic materials".JOURNAL OF APPLIED PHYSICS 111.5(2012). |
入库方式： OAI收割
来源：物理研究所
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