Void-like defects in annealed Czochralski silicon
文献类型：期刊论文
| 作者 | Gao, M ; Duan, XF ; Peng, LM ; Li, J |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1998 |
| 卷号 | 73期号:16页码:2311 |
| 关键词 | CRYSTAL-ORIGINATED PARTICLES WAFERS SIO2 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Gao, M (reprint author), Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Void-like defects of octahedron structure having {111} facets were observed in annealed Czochralski silicon. The amorphous coverage of SiOx and SiCx on the inner surface of the defects was identified using transmission electron microscopy and electron energy-loss spectroscopy. It is suggested that these defects are a kind of amorphous precipitate origin. A mechanism for the generation of these defects and the previously reported solid amorphous precipitates is proposed. (C) 1998 American Institute of Physics. [S0003-6951(98)02842-3]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46568]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gao, M,Duan, XF,Peng, LM,et al. Void-like defects in annealed Czochralski silicon[J]. APPLIED PHYSICS LETTERS,1998,73(16):2311. |
| APA | Gao, M,Duan, XF,Peng, LM,&Li, J.(1998).Void-like defects in annealed Czochralski silicon.APPLIED PHYSICS LETTERS,73(16),2311. |
| MLA | Gao, M,et al."Void-like defects in annealed Czochralski silicon".APPLIED PHYSICS LETTERS 73.16(1998):2311. |
入库方式： OAI收割
来源：物理研究所
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