WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD
文献类型：期刊论文
| 作者 | ZHANG, YH ; JIANG, DS ; LI, F ; ZHOU, JM ; MEI, XB |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 1992 |
| 卷号 | 72期号:7页码:3209 |
| 关键词 | EXCITON STARK LADDER SEMICONDUCTOR SUPERLATTICES ABSORPTION-EDGE BLUE SHIFT QUANTIZATION |
| ISSN号 | 0021-8979 |
| 通讯作者 | ZHANG, YH (reprint author), CHINESE ACAD SCI,INST SEMICOND,NATL LAB SUPERLATTICES & MICROSTRUCT,BEIJING 100083,PEOPLES R CHINA. |
| 中文摘要 | We have studied the Wannier-Stark effect in GaAs/GaAlAs short-period superlattices under applied electric field perpendicular to the layers by room- and low-temperature photocurrent measurements. The changes in the transition intensities with biasing are well fitted to a theoretical calculation based on the finite Kronig-Penney model on which the potential of an applied electric field is superposed. With increasing electric field, the 0h peak grows to a maximum while the -1h and +1h peaks monotonousely decrease. By a comparison of the spectra measured at different temperatures, the two peaks in the room temperature photocurrent spectra at relatively low electric field (1.0 X 10(4) V/cm) are identified to be caused by the Wannier localization effect instead of saddle-point excitons. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46597]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | ZHANG, YH,JIANG, DS,LI, F,et al. WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD[J]. JOURNAL OF APPLIED PHYSICS,1992,72(7):3209. |
| APA | ZHANG, YH,JIANG, DS,LI, F,ZHOU, JM,&MEI, XB.(1992).WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD.JOURNAL OF APPLIED PHYSICS,72(7),3209. |
| MLA | ZHANG, YH,et al."WANNIER LOCALIZATION IN GAAS/GAALAS SUPERLATTICES UNDER ELECTRIC-FIELD".JOURNAL OF APPLIED PHYSICS 72.7(1992):3209. |
入库方式： OAI收割
来源：物理研究所
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