中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi2Se3

文献类型:期刊论文

作者Matsuo, S ; Koyama, T ; Shimamura, K ; Arakawa, T ; Nishihara, Y ; Chiba, D ; Kobayashi, K ; Ono, T ; Chang, CZ ; He, K ; Ma, XC ; Xue, QK
刊名PHYSICAL REVIEW B
出版日期2012
卷号85期号:7
关键词SPIN-ORBIT INTERACTION SINGLE DIRAC CONE TOPOLOGICAL-INSULATOR SURFACE MAGNETORESISTANCE METALS LIMIT
ISSN号1098-0121
通讯作者Matsuo, S (reprint author), Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan.
中文摘要In this paper, we address the phase-coherent transport in a submicrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect.
收录类别SCI
资助信息JSPS
语种英语
公开日期2013-09-23
源URL[http://ir.iphy.ac.cn/handle/311004/46626]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Matsuo, S,Koyama, T,Shimamura, K,et al. Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi2Se3[J]. PHYSICAL REVIEW B,2012,85(7).
APA Matsuo, S.,Koyama, T.,Shimamura, K.,Arakawa, T.,Nishihara, Y.,...&Xue, QK.(2012).Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi2Se3.PHYSICAL REVIEW B,85(7).
MLA Matsuo, S,et al."Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi2Se3".PHYSICAL REVIEW B 85.7(2012).

入库方式: OAI收割

来源:物理研究所

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