Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi2Se3
文献类型:期刊论文
作者 | Matsuo, S ; Koyama, T ; Shimamura, K ; Arakawa, T ; Nishihara, Y ; Chiba, D ; Kobayashi, K ; Ono, T ; Chang, CZ ; He, K ; Ma, XC ; Xue, QK |
刊名 | PHYSICAL REVIEW B
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出版日期 | 2012 |
卷号 | 85期号:7 |
关键词 | SPIN-ORBIT INTERACTION SINGLE DIRAC CONE TOPOLOGICAL-INSULATOR SURFACE MAGNETORESISTANCE METALS LIMIT |
ISSN号 | 1098-0121 |
通讯作者 | Matsuo, S (reprint author), Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan. |
中文摘要 | In this paper, we address the phase-coherent transport in a submicrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect. |
收录类别 | SCI |
资助信息 | JSPS |
语种 | 英语 |
公开日期 | 2013-09-23 |
源URL | [http://ir.iphy.ac.cn/handle/311004/46626] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Matsuo, S,Koyama, T,Shimamura, K,et al. Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi2Se3[J]. PHYSICAL REVIEW B,2012,85(7). |
APA | Matsuo, S.,Koyama, T.,Shimamura, K.,Arakawa, T.,Nishihara, Y.,...&Xue, QK.(2012).Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi2Se3.PHYSICAL REVIEW B,85(7). |
MLA | Matsuo, S,et al."Weak antilocalization and conductance fluctuation in a submicrometer-sized wire of epitaxial Bi2Se3".PHYSICAL REVIEW B 85.7(2012). |
入库方式: OAI收割
来源:物理研究所
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