Wing tilt investigations on GaN epilayer grown on maskless grooved sapphire by MOCVD
文献类型：期刊论文
| 作者 | Yu, NS ; Zhu, XL ; Peng, MZ ; Zhou, JM |
| 刊名 | JOURNAL OF MATERIALS SCIENCE
 |
| 出版日期 | 2010 |
| 卷号 | 45期号:6页码:1503 |
| 关键词 | VAPOR-PHASE EPITAXY LATERAL OVERGROWTH THIN-FILMS ALPHA-GAN MICROSCOPY |
| ISSN号 | 0022-2461 |
| 通讯作者 | Yu, NS (reprint author), Dalian Nationalities Univ, Inst Optoelect Technol, Sch Math & Phys, Dalian 116600, Peoples R China. |
| 中文摘要 | GaN epilayer is grown on maskless periodically grooved sapphire by metal organic chemical vapor deposition (MOCVD) in this article. Wing tilt is detected by high resolution X-ray rocking curve. Inhomogeneous deformations between the wing and mesa regions are found by atomic force microscopy (AFM) characterization. The stress distribution is investigated using finite-element simulations. Inhomogeneous stress distribution in the mesa and wing regions is shown, which is also confirmed by micro-Raman spectroscopy. The results show that the wing tilt in GaN layers grown on maskless periodically grooved sapphire mainly originates from the different deformations for mesa and wing region caused by inhomogeneous stress distribution. |
| 收录类别 | SCI |
| 资助信息 | Dalian Nationalities Univerisity Doctor Fund [20096206] |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46654]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, NS,Zhu, XL,Peng, MZ,et al. Wing tilt investigations on GaN epilayer grown on maskless grooved sapphire by MOCVD[J]. JOURNAL OF MATERIALS SCIENCE,2010,45(6):1503. |
| APA | Yu, NS,Zhu, XL,Peng, MZ,&Zhou, JM.(2010).Wing tilt investigations on GaN epilayer grown on maskless grooved sapphire by MOCVD.JOURNAL OF MATERIALS SCIENCE,45(6),1503. |
| MLA | Yu, NS,et al."Wing tilt investigations on GaN epilayer grown on maskless grooved sapphire by MOCVD".JOURNAL OF MATERIALS SCIENCE 45.6(2010):1503. |
入库方式： OAI收割
来源：物理研究所
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