Wing-tilt-free gallium nitride laterally grown on maskless chemical-etched sapphire-patterned substrate
文献类型：期刊论文
| 作者 | Wang, J ; Guo, LW ; Jia, HQ ; Xing, G ; Wang, Y ; Chen, H ; Zhou, JM |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2005 |
| 卷号 | 23期号:6页码:2476 |
| 关键词 | GAN THIN-FILMS EPITAXIAL OVERGROWTH VAPOR-DEPOSITION DENSITY GAN REDUCTION LAYERS |
| ISSN号 | 1071-1023 |
| 通讯作者 | Guo, LW (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | A. method is developed to overcome the problem of wing tilt that appears in lateral epitaxial overgrowth of GaN films. High-quality GaN films free of wing tilt were obtained reproducibly on wet chemical-etched maskless c-plane sapphire substrate using metalorganic chemical vapor deposition (hereafter called CantiBridge epitaxy). Symmetrical (0002) x-ray diffraction of a 4.5-mu m-thick GaN film is performed with the scattering plane parallel and perpendicular to the stripe direction. The corresponding full widths at half maxima of the (0002) peaks are about 147 and 1,44 arcsec, respectively, which is one of the best results reported to date. Scanning electron microscopy cross-section images show that GaN was selectively grown on the mesas and the lateral overgrowth GaN spanned the etched trenches. No GaN was found on the grooved sapphire trenches, which is very different from the usually observed phenomena in other lateral epitaxial overgrowth techniques. It is inferred that damage-free mesas and grooves benefit the elimination of wing tilt and they improve the quality of the lateral overgrown GaN. The results indicate that CantiBridge epitaxy is a promising technique for fabricating high-quality GaN-based materials and devices. (c) 2005 American Vacuum Society. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-23 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/46655]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, J,Guo, LW,Jia, HQ,et al. Wing-tilt-free gallium nitride laterally grown on maskless chemical-etched sapphire-patterned substrate[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2005,23(6):2476. |
| APA | Wang, J.,Guo, LW.,Jia, HQ.,Xing, G.,Wang, Y.,...&Zhou, JM.(2005).Wing-tilt-free gallium nitride laterally grown on maskless chemical-etched sapphire-patterned substrate.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,23(6),2476. |
| MLA | Wang, J,et al."Wing-tilt-free gallium nitride laterally grown on maskless chemical-etched sapphire-patterned substrate".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23.6(2005):2476. |
入库方式： OAI收割
来源：物理研究所
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