中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
X-RAY-SCATTERING AND TOPOGRAPHY STUDIES OF HG1-XMNXTE EPITAXIAL-FILMS

文献类型:期刊论文

作者HALLAM, TD ; HALDER, SK ; HUDSON, JM ; LI, CR ; FUNAKI, M ; LEWIS, JE ; BRINKMAN, AW ; TANNER, BK
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
出版日期1993
卷号26期号:4A页码:A161
关键词HETEROEPITAXIAL GROWTH GAAS MOVPE CDXHG1-XTE/CDTE DIFFRACTION SI
ISSN号0022-3727
通讯作者HALLAM, TD (reprint author), UNIV DURHAM,DEPT PHYS,SOUTH RD,DURHAM DH1 3LE,ENGLAND.
中文摘要Epitaxial films of Hg1-xMnxTe (MMT), between 2 and 10 mum thick, have been grown by MOVPE on GaAs and CdZnTe substrates and their perfection assessed by high-resolution x-ray scattering and topography. The full width al half height maximum (FWHM) Was found to vary inversely with the MMT layer thickness, independently of Mn concentration or substrate type. A general increase in integrated intensity with thickness was observed, though with substantial variations between individual data points. Double-axis topography and triple-axis scattering showed that the greatest contribution to the double-axis FWHM came from tilts between subgrains within which the strain was small. Little difference was seen either in the double-axis FWHM or triple-axis isointensity contours between thick MMT layers grown on GaAs or CdZnTe substrates. The model of Ayers et al does not appear to be applicable to the system, which incorporates a CdTe buffer layer on the GaAs.
收录类别SCI
语种英语
公开日期2013-09-23
源URL[http://ir.iphy.ac.cn/handle/311004/46724]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
HALLAM, TD,HALDER, SK,HUDSON, JM,et al. X-RAY-SCATTERING AND TOPOGRAPHY STUDIES OF HG1-XMNXTE EPITAXIAL-FILMS[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,1993,26(4A):A161.
APA HALLAM, TD.,HALDER, SK.,HUDSON, JM.,LI, CR.,FUNAKI, M.,...&TANNER, BK.(1993).X-RAY-SCATTERING AND TOPOGRAPHY STUDIES OF HG1-XMNXTE EPITAXIAL-FILMS.JOURNAL OF PHYSICS D-APPLIED PHYSICS,26(4A),A161.
MLA HALLAM, TD,et al."X-RAY-SCATTERING AND TOPOGRAPHY STUDIES OF HG1-XMNXTE EPITAXIAL-FILMS".JOURNAL OF PHYSICS D-APPLIED PHYSICS 26.4A(1993):A161.

入库方式: OAI收割

来源:物理研究所

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