X-RAY-SCATTERING AND TOPOGRAPHY STUDIES OF HG1-XMNXTE EPITAXIAL-FILMS
文献类型:期刊论文
作者 | HALLAM, TD ; HALDER, SK ; HUDSON, JM ; LI, CR ; FUNAKI, M ; LEWIS, JE ; BRINKMAN, AW ; TANNER, BK |
刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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出版日期 | 1993 |
卷号 | 26期号:4A页码:A161 |
关键词 | HETEROEPITAXIAL GROWTH GAAS MOVPE CDXHG1-XTE/CDTE DIFFRACTION SI |
ISSN号 | 0022-3727 |
通讯作者 | HALLAM, TD (reprint author), UNIV DURHAM,DEPT PHYS,SOUTH RD,DURHAM DH1 3LE,ENGLAND. |
中文摘要 | Epitaxial films of Hg1-xMnxTe (MMT), between 2 and 10 mum thick, have been grown by MOVPE on GaAs and CdZnTe substrates and their perfection assessed by high-resolution x-ray scattering and topography. The full width al half height maximum (FWHM) Was found to vary inversely with the MMT layer thickness, independently of Mn concentration or substrate type. A general increase in integrated intensity with thickness was observed, though with substantial variations between individual data points. Double-axis topography and triple-axis scattering showed that the greatest contribution to the double-axis FWHM came from tilts between subgrains within which the strain was small. Little difference was seen either in the double-axis FWHM or triple-axis isointensity contours between thick MMT layers grown on GaAs or CdZnTe substrates. The model of Ayers et al does not appear to be applicable to the system, which incorporates a CdTe buffer layer on the GaAs. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-23 |
源URL | [http://ir.iphy.ac.cn/handle/311004/46724] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | HALLAM, TD,HALDER, SK,HUDSON, JM,et al. X-RAY-SCATTERING AND TOPOGRAPHY STUDIES OF HG1-XMNXTE EPITAXIAL-FILMS[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,1993,26(4A):A161. |
APA | HALLAM, TD.,HALDER, SK.,HUDSON, JM.,LI, CR.,FUNAKI, M.,...&TANNER, BK.(1993).X-RAY-SCATTERING AND TOPOGRAPHY STUDIES OF HG1-XMNXTE EPITAXIAL-FILMS.JOURNAL OF PHYSICS D-APPLIED PHYSICS,26(4A),A161. |
MLA | HALLAM, TD,et al."X-RAY-SCATTERING AND TOPOGRAPHY STUDIES OF HG1-XMNXTE EPITAXIAL-FILMS".JOURNAL OF PHYSICS D-APPLIED PHYSICS 26.4A(1993):A161. |
入库方式: OAI收割
来源:物理研究所
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