Strain accumulation in InAs/In (x) Ga1-x As quantum dots
文献类型：期刊论文
| 作者 | Wang, L ; Li, MC ; Wang, WX ; Tian, HT ; Xing, ZG ; Xiong, M ; Zhao, LC |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2011 |
| 卷号 | 104期号:2页码:567 |
| 关键词 | RAY INTERFERENCE GROWTH LAYER WELLS |
| ISSN号 | 0947-8396 |
| 通讯作者 | Wang, WX (reprint author), Chinese Acad Sci, Inst Phys, Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The effect of strain accumulation in the InAs/In (x) Ga1-x As quantum dots (QDs) system was studied in this work. It was found that strain in the In (x) Ga1-x As layer accumulation in the QD layer. This effect resulted in a dramatic reduction of growth mode transition thickness of the QD layer. For InAs/In0.25Ga0.75As QDs, critical thickness is measured to be as low as 1.08 ML. The experimental results in this work highlight the importance of strain accumulation in the design and fabrication of QD-based devices with metamorphic buffer layer involved. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [50572120, 50972032]; National High Technology Research and Development Program of China [2009AA033101, 2009AA03Z407]; National Basic Research Program of China [2010CB327501] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/49628]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, L,Li, MC,Wang, WX,et al. Strain accumulation in InAs/In (x) Ga1-x As quantum dots[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2011,104(2):567. |
| APA | Wang, L.,Li, MC.,Wang, WX.,Tian, HT.,Xing, ZG.,...&Zhao, LC.(2011).Strain accumulation in InAs/In (x) Ga1-x As quantum dots.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,104(2),567. |
| MLA | Wang, L,et al."Strain accumulation in InAs/In (x) Ga1-x As quantum dots".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 104.2(2011):567. |
入库方式： OAI收割
来源：物理研究所
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