Nanocrystalline Si:H thin films grown at room temperature with plasma-enhanced chemical vapour deposition at a very high pressure
文献类型：期刊论文
| 作者 | Gao, L ; Lu, NP ; Liao, LG ; Ji, AL ; Cao, ZX |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2012 |
| 卷号 | 45期号:33 |
| 关键词 | AMORPHOUS-SILICON NANOPARTICLES MICROCRYSTALLINE SILICON SOLAR-CELLS GLOW-DISCHARGE RAMAN-SPECTRA PHOTOLUMINESCENCE FABRICATION |
| ISSN号 | 0022-3727 |
| 通讯作者 | Gao, L (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | Hydrogenated nanocrystalline silicon (nc-Si : H) films were grown using the plasma-enhanced chemical vapour deposition method, with the plasma operated under a gas pressure of up to 30 mbar, i.e. on the verge of plasma instability. The heating effect in determining the crystallite size and crystalline volume fraction can be excluded as the maximum substrate temperature was below 80 degrees C at the end of growth. Crystallite initiation occurs in the plasma sheath, and Si nanocrystallites appear only when the gas pressure is above 10 mbar. With the pressure increasing to 30 mbar, the volume fraction of the nanocrystalline phase increases steadily, and the crystallite size changes from similar to 7.8 to similar to 4.5 nm. The optical bandgap of the deposits varies between 2.30 eV (at 15 mbar) and 2.03 eV (at 30 mbar), which can be explained in terms of the reduced hydrogen content and confinement effect. This work opens up the possibility of growing nc-Si : H films with well-controlled crystallite features on substrates held at near room temperature. |
| 收录类别 | SCI |
| 资助信息 | Innovation Program of the Chinese Academy of Sciences; National Natural Science Foundation of China [10974227, 51172272, 10904165]; National Basic Research Program of China [2009CB930801, 2012CB933002] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/49652]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gao, L,Lu, NP,Liao, LG,et al. Nanocrystalline Si:H thin films grown at room temperature with plasma-enhanced chemical vapour deposition at a very high pressure[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2012,45(33). |
| APA | Gao, L,Lu, NP,Liao, LG,Ji, AL,&Cao, ZX.(2012).Nanocrystalline Si:H thin films grown at room temperature with plasma-enhanced chemical vapour deposition at a very high pressure.JOURNAL OF PHYSICS D-APPLIED PHYSICS,45(33). |
| MLA | Gao, L,et al."Nanocrystalline Si:H thin films grown at room temperature with plasma-enhanced chemical vapour deposition at a very high pressure".JOURNAL OF PHYSICS D-APPLIED PHYSICS 45.33(2012). |
入库方式： OAI收割
来源：物理研究所
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