Nanoelliptic Ring-Shaped Magnetic Tunnel Junction and Its Application in MRAM Design With Spin-Polarized Current Switching
文献类型：期刊论文
| 作者 | Han, XF ; Wen, ZC ; Wang, Y ; Liu, HF ; Wei, HX ; Liu, DP |
| 刊名 | IEEE TRANSACTIONS ON MAGNETICS
 |
| 出版日期 | 2011 |
| 卷号 | 47期号:10页码:2957 |
| 关键词 | TRANSFER TORQUES DRIVEN NANOMAGNET |
| ISSN号 | 0018-9464 |
| 通讯作者 | Han, XF (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Nanoring magnetic tunnel junction (NR-MTJs) with outer diameter of 90 nm, and nanoelliptical ring (NER) -shaped MTJ with major outer diameter of 120 nm, and minor outer diameter of 70 nm were fabricated. For both geometrical structures, the ring width was kept at around 30 nm. The magnetic field driven and current-induced magnetization switching of the NR-MTJs and NER-MTJs were investigated. Compared with the NR-MTJs, the NER-MTJs show a sharp magnetization switching and lower coercivity under the sweep of an external magnetic field, which indicates the higher uniaxial anisotropy of NER-MTJs. In addition, the current-induced magnetization switching was achieved in both MTJs which indicated a lower critical current density in sandwiched-type and spin-valve-type NER-MTJs. This reduction of critical current could be resulting from different distribution of current-induced Oersted field in the NR-MTJs and NER-MTJs, which play an assisted role in spin transfer torque switching. This work proposes the NER-MTJs with the low current density, and small stray field, as data storage bits of magnetic random access memory (MRAM), could be a promising candidate for further reducing the power consumption, scaling memory cell size and increasing density of MRAM. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/49658]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, XF,Wen, ZC,Wang, Y,et al. Nanoelliptic Ring-Shaped Magnetic Tunnel Junction and Its Application in MRAM Design With Spin-Polarized Current Switching[J]. IEEE TRANSACTIONS ON MAGNETICS,2011,47(10):2957. |
| APA | Han, XF,Wen, ZC,Wang, Y,Liu, HF,Wei, HX,&Liu, DP.(2011).Nanoelliptic Ring-Shaped Magnetic Tunnel Junction and Its Application in MRAM Design With Spin-Polarized Current Switching.IEEE TRANSACTIONS ON MAGNETICS,47(10),2957. |
| MLA | Han, XF,et al."Nanoelliptic Ring-Shaped Magnetic Tunnel Junction and Its Application in MRAM Design With Spin-Polarized Current Switching".IEEE TRANSACTIONS ON MAGNETICS 47.10(2011):2957. |
入库方式： OAI收割
来源：物理研究所
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