Nanometer-scale recording with transition time at nanosecond
文献类型：期刊论文
| 作者 | Shi, DX ; Ba, DC ; Pang, SJ ; Gao, HJ |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2001 |
| 卷号 | 182期号:1-2页码:64 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPE ATOMIC-FORCE MICROSCOPY DENSITY DATA-STORAGE ORGANIC-COMPLEX THIN-FILMS ELECTRICAL BISTABILITY TIP NANOFABRICATION LITHOGRAPHY PROBE |
| ISSN号 | 0169-4332 |
| 通讯作者 | Shi, DX (reprint author), Chinese Acad Sci, Inst Phys, Beijing Lab Vacuum Phys, POB 2724, Beijing 100080, Peoples R China. |
| 中文摘要 | Recording at a nanometer-scale on 3-phenyl-1-ureidonitrile (CPU) thin films is successfully conducted using scanning tunneling microscopy (STM) in ambient conditions. Recorded marks are written when a series of voltage pulses are applied between the STM tip and the freshly cleaned highly ordered pyrolytic graphite (HOPG) substrates. STM current-voltage (I-V) curves of the films show that the electric resistance in the recorded regions is much lower than that in the unrecorded regions. Standard four-point probe measurements indicate that the transition time of the transient conductance is 6 ns. It is suggested ;that CPU organic thin films have potential in the application of future data storage. (C) 2001 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/49672]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shi, DX,Ba, DC,Pang, SJ,et al. Nanometer-scale recording with transition time at nanosecond[J]. APPLIED SURFACE SCIENCE,2001,182(1-2):64. |
| APA | Shi, DX,Ba, DC,Pang, SJ,&Gao, HJ.(2001).Nanometer-scale recording with transition time at nanosecond.APPLIED SURFACE SCIENCE,182(1-2),64. |
| MLA | Shi, DX,et al."Nanometer-scale recording with transition time at nanosecond".APPLIED SURFACE SCIENCE 182.1-2(2001):64. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。