中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Nanopipes in undoped AlGaN epilayers

文献类型:期刊论文

作者Kang, JY ; Tsunekawa, S ; Shen, B ; Mai, ZH ; Wang, CY ; Tsuru, T ; Kasuya, A
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2001
卷号229期号:1页码:58
关键词GAN EPILAYERS DISLOCATIONS FILMS MECHANISM GROWTH
ISSN号0022-0248
通讯作者Kang, JY (reprint author), Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China.
中文摘要The surface morphologies of nanopipes were imaged using a scanning electron microscope and an atomic force microscope in undoped AlGaN epilayers grown by metal organic vapor phase epitaxy on GaN-based layers, The nanopipes usually appear as dodecagonal and hexagonal pyramidal indentations for larger and smaller sizes, respectively, with a pinhole at each of their centers. The results indicate that {1 1 (2) over bar 1} facets may play an important role as well as {1 0 (1) over bar 1} facets during the nanopipe formation in undoped AlGaN epilayers, Energy dispersive X-ray spectroscopy shows that Al atoms have precipitated more distinctly on the facets of the nanopipes. The image of yellow cathodoluminescence is characterized by a bright ring around the outer region of pyramidal indentations. This is suggested to be a result of competition between the higher concentration of the defects responsible for the yellow luminescence and the thinner epilayer in the facet site. (C) 2001 Elsevier Science B.V, All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/49680]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Kang, JY,Tsunekawa, S,Shen, B,et al. Nanopipes in undoped AlGaN epilayers[J]. JOURNAL OF CRYSTAL GROWTH,2001,229(1):58.
APA Kang, JY.,Tsunekawa, S.,Shen, B.,Mai, ZH.,Wang, CY.,...&Kasuya, A.(2001).Nanopipes in undoped AlGaN epilayers.JOURNAL OF CRYSTAL GROWTH,229(1),58.
MLA Kang, JY,et al."Nanopipes in undoped AlGaN epilayers".JOURNAL OF CRYSTAL GROWTH 229.1(2001):58.

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来源:物理研究所

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