Nanopipes in undoped AlGaN epilayers
文献类型:期刊论文
作者 | Kang, JY ; Tsunekawa, S ; Shen, B ; Mai, ZH ; Wang, CY ; Tsuru, T ; Kasuya, A |
刊名 | JOURNAL OF CRYSTAL GROWTH
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出版日期 | 2001 |
卷号 | 229期号:1页码:58 |
关键词 | GAN EPILAYERS DISLOCATIONS FILMS MECHANISM GROWTH |
ISSN号 | 0022-0248 |
通讯作者 | Kang, JY (reprint author), Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. |
中文摘要 | The surface morphologies of nanopipes were imaged using a scanning electron microscope and an atomic force microscope in undoped AlGaN epilayers grown by metal organic vapor phase epitaxy on GaN-based layers, The nanopipes usually appear as dodecagonal and hexagonal pyramidal indentations for larger and smaller sizes, respectively, with a pinhole at each of their centers. The results indicate that {1 1 (2) over bar 1} facets may play an important role as well as {1 0 (1) over bar 1} facets during the nanopipe formation in undoped AlGaN epilayers, Energy dispersive X-ray spectroscopy shows that Al atoms have precipitated more distinctly on the facets of the nanopipes. The image of yellow cathodoluminescence is characterized by a bright ring around the outer region of pyramidal indentations. This is suggested to be a result of competition between the higher concentration of the defects responsible for the yellow luminescence and the thinner epilayer in the facet site. (C) 2001 Elsevier Science B.V, All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/49680] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Kang, JY,Tsunekawa, S,Shen, B,et al. Nanopipes in undoped AlGaN epilayers[J]. JOURNAL OF CRYSTAL GROWTH,2001,229(1):58. |
APA | Kang, JY.,Tsunekawa, S.,Shen, B.,Mai, ZH.,Wang, CY.,...&Kasuya, A.(2001).Nanopipes in undoped AlGaN epilayers.JOURNAL OF CRYSTAL GROWTH,229(1),58. |
MLA | Kang, JY,et al."Nanopipes in undoped AlGaN epilayers".JOURNAL OF CRYSTAL GROWTH 229.1(2001):58. |
入库方式: OAI收割
来源:物理研究所
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