Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction
文献类型：期刊论文
| 作者 | Liu, HH ; Duan, XF ; Qi, XY ; Xu, QX ; Li, HO ; Qian, H |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2006 |
| 卷号 | 88期号:26 |
| 关键词 | MOBILITY ENHANCEMENT LAYER SUPERLATTICES ELASTIC RELAXATION SPECIMENS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Liu, HH (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | In this letter we report the characterization of local compressive strain in p-type strained-silicon channel metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction. The compressive strain was induced into the channel region of gate length of 80 nm strained-Si p-type metal-oxide-semiconductor field effect transistor by Ge preamorphization implantation for source/drain extension. A method to distinguish between compressive strain and shear strain in the cross-sectional transmission electron microscopy specimens is proposed. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/49688]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, HH,Duan, XF,Qi, XY,et al. Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction[J]. APPLIED PHYSICS LETTERS,2006,88(26). |
| APA | Liu, HH,Duan, XF,Qi, XY,Xu, QX,Li, HO,&Qian, H.(2006).Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction.APPLIED PHYSICS LETTERS,88(26). |
| MLA | Liu, HH,et al."Nanoscale strain analysis of strained-Si metal-oxide-semiconductor field effect transistors by large angle convergent-beam electron diffraction".APPLIED PHYSICS LETTERS 88.26(2006). |
入库方式： OAI收割
来源：物理研究所
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