Nanostructure Formation and Passivation of Large-Area Black Silicon for Solar Cell Applications
文献类型：期刊论文
| 作者 | Liu, YP ; Lai, T ; Li, HL ; Wang, Y ; Mei, ZX ; Liang, HL ; Li, ZL ; Zhang, FM ; Wang, WJ ; Kuznetsov, AY ; Du, XL |
| 刊名 | SMALL
 |
| 出版日期 | 2012 |
| 卷号 | 8期号:9页码:1392 |
| 关键词 | POROUS SILICON SURFACE FABRICATION NANOWIRES PARTICLE LAYER |
| ISSN号 | 1613-6810 |
| 通讯作者 | Du, XL (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Nanoscale textured silicon and its passivation are explored by simple low-cost metal-assisted chemical etching and thermal oxidation, and large-area black silicon was fabricated both on single-crystalline Si and multicrystalline Si for solar cell applications. When the Si surface was etched by HF/AgNO3 solution for 4 or 5 min, nanopores formed in the Si surface, 50100 nm in diameter and 200300 nm deep. The nanoscale textured silicon surface turns into an effective medium with a gradually varying refractive index, which leads to the low reflectivity and black appearance of the samples. Mean reflectance was reduced to as low as 2% for crystalline Si and 4% for multicrystalline Si from 300 to 1000 nm, with no antireflective (AR) coating. A black-etched multicrystalline-Si of 156 mm X 156 mm was used to fabricate a primary solar cell with no surface passivation or AR coating. Its conversion efficiency (?) was 11.5%. The cell conversion efficiency was increased greatly by using surface passivation process, which proved very useful in suppressing excess carrier recombination on the nanostructured surface. Finally, a black m-Si cell with efficiency of 15.8% was achieved by using SiO2 and SiNX bilayer passivation structure, indicating that passivation plays a key role in large-scale manufacture of black silicon solar cells. |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation [61076007, 50532090, 60606023, 10804126, 10974246]; Ministry of Science and Technology of China [2007CB936203, 2009CB929400, 2009AA033101, 2011CB302002]; Chinese Academy of Sciences; Research Council of Norway |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/49699]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, YP,Lai, T,Li, HL,et al. Nanostructure Formation and Passivation of Large-Area Black Silicon for Solar Cell Applications[J]. SMALL,2012,8(9):1392. |
| APA | Liu, YP.,Lai, T.,Li, HL.,Wang, Y.,Mei, ZX.,...&Du, XL.(2012).Nanostructure Formation and Passivation of Large-Area Black Silicon for Solar Cell Applications.SMALL,8(9),1392. |
| MLA | Liu, YP,et al."Nanostructure Formation and Passivation of Large-Area Black Silicon for Solar Cell Applications".SMALL 8.9(2012):1392. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。