Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface
文献类型：期刊论文
| 作者 | Wen, C ; Wang, YM ; Wan, W ; Li, FH ; Liang, JW ; Zou, J |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2009 |
| 卷号 | 106期号:7 |
| 关键词 | RESOLUTION ELECTRON-MICROSCOPY PHASE-OBJECT APPROXIMATION CHEMICAL-VAPOR-DEPOSITION IMAGE DECONVOLUTION HETEROEPITAXIAL GROWTH THEORETICAL CONSIDERATION ATOMIC CONFIGURATION PARTIAL DISLOCATIONS MISFIT DISLOCATIONS LOMER DISLOCATION |
| ISSN号 | 0021-8979 |
| 通讯作者 | Li, FH (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Misfit defects in a 3C-SiC/Si (001) interface were investigated using a 200 kV high-resolution electron microscope with a point resolution of 0.194 nm. The [110] high-resolution electron microscopic images that do not directly reflect the crystal structure were transformed into the structure map through image deconvolution. Based on this analysis, four types of misfit dislocations at the 3C-SiC/Si (001) interface were determined. In turn, the strain relaxation mechanism was clarified through the generation of grow-in perfect misfit dislocations (including 90 degrees Lomer dislocations and 60 degrees shuffle dislocations) and 90 partial dislocations associated with stacking faults. (C) 2009 American Institute of Physics. [doi:10.1063/1.3234380] |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [50672124]; Chinese High Technology Program [2006AA03A106]; Australia Research Council [DP0663304, DP0985084] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/49709]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wen, C,Wang, YM,Wan, W,et al. Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface[J]. JOURNAL OF APPLIED PHYSICS,2009,106(7). |
| APA | Wen, C,Wang, YM,Wan, W,Li, FH,Liang, JW,&Zou, J.(2009).Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface.JOURNAL OF APPLIED PHYSICS,106(7). |
| MLA | Wen, C,et al."Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface".JOURNAL OF APPLIED PHYSICS 106.7(2009). |
入库方式： OAI收割
来源：物理研究所
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