Nature of planar defects in ion-implanted GaN
文献类型：期刊论文
| 作者 | Wang, YG ; Zou, J ; Kucheyev, SO ; Williams, JS ; Jagadish, C ; Li, G |
| 刊名 | ELECTROCHEMICAL AND SOLID STATE LETTERS
 |
| 出版日期 | 2003 |
| 卷号 | 6期号:3页码:G34 |
| 关键词 | DAMAGE |
| ISSN号 | 1099-0062 |
| 通讯作者 | Wang, YG (reprint author), Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia. |
| 中文摘要 | Wurtzite GaN films bombarded with keV ions were studied by high-resolution transmission electron microscopy. Results showed that irradiation under a wide range of implant conditions (such as ion mass, dose, and implant temperature) led to the formation of planar defects which were parallel to the basal plane of the wurtzite structure. For all implant conditions studied, all planar defects observed in the similar to20 nm thick near-surface layers of GaN were interstitial in nature and had Burgers vectors of either 1/2[0001] or 1/6<2 (2) over bar 03>. Although the nature of these irradiation-produced planar defects appeared to be independent of implant conditions, irradiation parameters were found to influence the average defect size and density. In particular, larger planar defects were observed for higher irradiation temperatures. Possible physical mechanisms for the formation of such planar defects are discussed. (C) 2003 The Electrochemical Society. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/49711]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, YG,Zou, J,Kucheyev, SO,et al. Nature of planar defects in ion-implanted GaN[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS,2003,6(3):G34. |
| APA | Wang, YG,Zou, J,Kucheyev, SO,Williams, JS,Jagadish, C,&Li, G.(2003).Nature of planar defects in ion-implanted GaN.ELECTROCHEMICAL AND SOLID STATE LETTERS,6(3),G34. |
| MLA | Wang, YG,et al."Nature of planar defects in ion-implanted GaN".ELECTROCHEMICAL AND SOLID STATE LETTERS 6.3(2003):G34. |
入库方式： OAI收割
来源：物理研究所
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