N-doped LaAlO3/Si(100) films with high-k, low-leakage current and good thermal stability
文献类型：期刊论文
| 作者 | Xiang, WF ; Lu, HB ; Chen, ZH ; He, M ; Lu, XB ; Liu, LF ; Guo, HZ ; Zhou, YL |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:1页码:182 |
| 关键词 | RAY PHOTOELECTRON-SPECTROSCOPY THIN-FILMS AMORPHOUS LAALO3 DEPOSITION SI(100) TIN |
| ISSN号 | 0256-307X |
| 通讯作者 | Chen, ZH (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | High quality amorphous N-doped LaAlO3 (LaAlON) films have been deposited on Si (100) in nitrogen gas by laser molecular beam epitaxy. The chemical nature and physical distribution of N in LaAlON films has been performed by x-ray photoemission spectroscopy. Compared with LaAlO3, a significant improvement in the interfacial quality and leakage current density was obtained by nitrogen additive. At gate voltage +1 V, the leakage current density of the LaAlON film with an equivalent oxide thickness as thin as 2nm is obtained to be 2.9 x 10(-6) A/cm(2), which decreases almost two orders of magnitude from that of LaAlO3 film with the same thickness. Moreover, high-resolution transmission electron microscope analysis show that the LaAlON sample is still amorphous with a very sharp interface between the LaAlON layer and the Si substrate after annealed at 900degreesC for 60s. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/49751]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xiang, WF,Lu, HB,Chen, ZH,et al. N-doped LaAlO3/Si(100) films with high-k, low-leakage current and good thermal stability[J]. CHINESE PHYSICS LETTERS,2005,22(1):182. |
| APA | Xiang, WF.,Lu, HB.,Chen, ZH.,He, M.,Lu, XB.,...&Zhou, YL.(2005).N-doped LaAlO3/Si(100) films with high-k, low-leakage current and good thermal stability.CHINESE PHYSICS LETTERS,22(1),182. |
| MLA | Xiang, WF,et al."N-doped LaAlO3/Si(100) films with high-k, low-leakage current and good thermal stability".CHINESE PHYSICS LETTERS 22.1(2005):182. |
入库方式： OAI收割
来源：物理研究所
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