New types of defects in SiC grown by the PVT method
文献类型：期刊论文
| 作者 | Zhu, LN ; Li, HQ ; Hu, BQ ; Wu, X ; Chen, XL |
| 刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
 |
| 出版日期 | 2005 |
| 卷号 | 17期号:10页码:L85 |
| 关键词 | MODIFIED-LELY METHOD SILICON-CARBIDE SINGLE-CRYSTALS SUBLIMATION GROWTH BULK CRYSTALS PHASE VAPOR SEMICONDUCTOR MICROPIPES INCLUSIONS |
| ISSN号 | 0953-8984 |
| 通讯作者 | Chen, XL (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The quality of SiC crystals grown by the physical vapour transport (PVT) method was studied by means of optical microscopy and scanning electron microscopy (SEM) observations with the aid, of etching by molten KOH. New types of defects were found, including triangular etching pits, shallow hexagonal etching pits and dendritic silicon inclusions in 4H-SiC. The triangular etching pits usually appear on the C face with a size comparable with the irregular dark etching pits due to the micropipes, while the shallow hexagonal etching pits were observed on the Si face with a size comparable with that due to the micropipes. The silicon inclusions exhibit dendritic shape up to several microns like those usually observed in metal alloys. In addition, 4H-SiC and 6H-SiC domains with different polarities in the growth surface were found to develop from the same seed. The interface of 4H-SiC and 6H-Sic was one of the sources for inducing the micropipes. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/49879]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhu, LN,Li, HQ,Hu, BQ,et al. New types of defects in SiC grown by the PVT method[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2005,17(10):L85. |
| APA | Zhu, LN,Li, HQ,Hu, BQ,Wu, X,&Chen, XL.(2005).New types of defects in SiC grown by the PVT method.JOURNAL OF PHYSICS-CONDENSED MATTER,17(10),L85. |
| MLA | Zhu, LN,et al."New types of defects in SiC grown by the PVT method".JOURNAL OF PHYSICS-CONDENSED MATTER 17.10(2005):L85. |
入库方式： OAI收割
来源：物理研究所
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