Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si
文献类型：期刊论文
| 作者 | Liu, BT ; Cheng, CS ; Li, F ; Ma, L ; Zhao, QX ; Yan, Z ; Wu, DQ ; Li, CR ; Wang, Y ; Li, XH ; Zhang, XY |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2006 |
| 卷号 | 88期号:25 |
| 关键词 | TI-AL HETEROSTRUCTURES POLARIZATION PB(ZR RESISTANCE MEMORIES SILICON GROWTH TI)O-3 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Liu, BT (reprint author), Hebei Univ, Coll Phys Sci & Technol, Hebei 071002, Peoples R China. |
| 中文摘要 | We report on the use of amorphous Ni-Al film (a-Ni-Al) as conductive diffusion barrier layer to integrate La0.5Sr0.5CoO3/PbZr0.4Ti0.6O3/La0.5Sr0.5CoO3 capacitors on silicon. Cross-sectional observation by transmission electron microscope reveals clean and sharp interfaces without any discernible interdiffusion/reaction in the sample. The physical properties of the capacitors are vertically characterized as the parameters of memory elements. Excellent ferroelectric properties, e.g., large remnant polarization of similar to 22 mu C/cm(2), small coercive voltage of similar to 1.15 V, being fatigue-free, good retention characteristic, imply that amorphous Ni-Al is an ideal candidate for diffusion barrier for the high-density ferroelectric random access memories integrated with silicon transistor technology. (c) 2006 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/49892]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, BT,Cheng, CS,Li, F,et al. Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si[J]. APPLIED PHYSICS LETTERS,2006,88(25). |
| APA | Liu, BT.,Cheng, CS.,Li, F.,Ma, L.,Zhao, QX.,...&Zhang, XY.(2006).Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si.APPLIED PHYSICS LETTERS,88(25). |
| MLA | Liu, BT,et al."Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si".APPLIED PHYSICS LETTERS 88.25(2006). |
入库方式： OAI收割
来源：物理研究所
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