中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
NiSi film synthesized by isochronal annealing in a magnetron sputtering system

文献类型:期刊论文

作者Yue, SL ; Luo, Q ; Shi, CY ; Yang, HX ; Wang, Q ; Xu, P ; Gu, CZ
刊名CHINESE PHYSICS LETTERS
出版日期2006
卷号23期号:3页码:678
关键词THERMAL-STABILITY SILICIDE FORMATION NICKEL RESISTIVITY TECHNOLOGY CMOS THIN
ISSN号0256-307X
通讯作者Gu, CZ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China.
中文摘要By repeatedly pre-cleaning the sputtering chamber with Ar gas and in-situ isochronal annealing samples, NiSi films are successfully prepared on Si (100) substrates in a radio-frequency magnetron sputtering system. A comparison between the obtained NiSi and excess oxygen-contaminated Ni/Si films has been performed by EDX analysis of oxygen atomic content in both the films. Focused ion beam milling technology is employed to make the cross-sections of the samples for characterizing the NiSi film thickness and NiSi/Si interface roughness. The influences of nickel film thickness oil the NiSi-film morphology and on the NiSi/Si interface roughness are studied.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/49906]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Yue, SL,Luo, Q,Shi, CY,et al. NiSi film synthesized by isochronal annealing in a magnetron sputtering system[J]. CHINESE PHYSICS LETTERS,2006,23(3):678.
APA Yue, SL.,Luo, Q.,Shi, CY.,Yang, HX.,Wang, Q.,...&Gu, CZ.(2006).NiSi film synthesized by isochronal annealing in a magnetron sputtering system.CHINESE PHYSICS LETTERS,23(3),678.
MLA Yue, SL,et al."NiSi film synthesized by isochronal annealing in a magnetron sputtering system".CHINESE PHYSICS LETTERS 23.3(2006):678.

入库方式: OAI收割

来源:物理研究所

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