NiSi film synthesized by isochronal annealing in a magnetron sputtering system
文献类型：期刊论文
| 作者 | Yue, SL ; Luo, Q ; Shi, CY ; Yang, HX ; Wang, Q ; Xu, P ; Gu, CZ |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:3页码:678 |
| 关键词 | THERMAL-STABILITY SILICIDE FORMATION NICKEL RESISTIVITY TECHNOLOGY CMOS THIN |
| ISSN号 | 0256-307X |
| 通讯作者 | Gu, CZ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | By repeatedly pre-cleaning the sputtering chamber with Ar gas and in-situ isochronal annealing samples, NiSi films are successfully prepared on Si (100) substrates in a radio-frequency magnetron sputtering system. A comparison between the obtained NiSi and excess oxygen-contaminated Ni/Si films has been performed by EDX analysis of oxygen atomic content in both the films. Focused ion beam milling technology is employed to make the cross-sections of the samples for characterizing the NiSi film thickness and NiSi/Si interface roughness. The influences of nickel film thickness oil the NiSi-film morphology and on the NiSi/Si interface roughness are studied. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/49906]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yue, SL,Luo, Q,Shi, CY,et al. NiSi film synthesized by isochronal annealing in a magnetron sputtering system[J]. CHINESE PHYSICS LETTERS,2006,23(3):678. |
| APA | Yue, SL.,Luo, Q.,Shi, CY.,Yang, HX.,Wang, Q.,...&Gu, CZ.(2006).NiSi film synthesized by isochronal annealing in a magnetron sputtering system.CHINESE PHYSICS LETTERS,23(3),678. |
| MLA | Yue, SL,et al."NiSi film synthesized by isochronal annealing in a magnetron sputtering system".CHINESE PHYSICS LETTERS 23.3(2006):678. |
入库方式： OAI收割
来源：物理研究所
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