Nitrogen-incorporated distorted nanocrystalline diamond films: Structure and field emission properties
文献类型：期刊论文
| 作者 | Wu, KH ; Wang, EG ; Chen, J ; Xu, NS |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 1999 |
| 卷号 | 17期号:3页码:1059 |
| 关键词 | CARBON NITRIDE FILMS ELECTRON-EMISSION THIN-FILMS AMORPHOUS-CARBON IN-SITU SPECTROSCOPY DEPOSITION DEPENDENCE |
| ISSN号 | 1071-1023 |
| 通讯作者 | Wu, KH (reprint author), Chinese Acad Sci, State Key Lab Surface Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | Nitrogen-incorporated distorted nanocrystalline diamond films were grown by microwave plasma enhanced chemical vapor deposition using N-2 and CH4 as precursors. Scanning electron microscopy, transmission electron microscopy, x-ray diffraction and Raman spectroscopy were used to characterize the films, which are composed of nanosized crystals with a local distorted but long-range ordered structure. A field electron emission threshold as low as 1.3 V/mu m has been obtained, and it decreases with a reduction of the methane to nitrogen ratio. The observed low emission threshold, good long-term stability and high maximum emission current (1 mA) suggest a new candidate for cold cathodes. In addition, an interesting switching phenomenon was found in the present films. (C) 1999 American Vacuum Society. [S0734-211X(99)02903-0]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/49912]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, KH,Wang, EG,Chen, J,et al. Nitrogen-incorporated distorted nanocrystalline diamond films: Structure and field emission properties[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1999,17(3):1059. |
| APA | Wu, KH,Wang, EG,Chen, J,&Xu, NS.(1999).Nitrogen-incorporated distorted nanocrystalline diamond films: Structure and field emission properties.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,17(3),1059. |
| MLA | Wu, KH,et al."Nitrogen-incorporated distorted nanocrystalline diamond films: Structure and field emission properties".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 17.3(1999):1059. |
入库方式： OAI收割
来源：物理研究所
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