中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices

文献类型:期刊论文

作者Cao, MG ; Chen, YS ; Sun, JR ; Shang, DS ; Liu, LF ; Kang, JF ; Shen, BG
刊名APPLIED PHYSICS LETTERS
出版日期2012
卷号101期号:20
关键词RESET MECHANISM MEMORY RESISTANCE FILMS RRAM
ISSN号0003-6951
通讯作者Cao, MG (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要Dynamic processes of resistance switching have been systemically investigated for the Ti/HfO2/Pt bipolar devices. Different transient characteristics were observed in the set and reset processes. The set process consisted of a waiting step and a following abrupt transition, whereas the reset process demonstrated a gradual resistance change. Nonlinear dependence of set time on pulse voltage was observed and explained by the thermally accelerated dielectric breakdown of local switching regions. The accumulation and dissipation effects observed for different pulse treatments strongly supported the proposed model, which suggests a possible approach to overcome the voltage-time dilemma. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766737]
收录类别SCI
资助信息National Basic Research of China; National Natural Science Foundation of China; Chinese Academy of Sciences; Beijing Municipal Natural Science Foundation
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/49961]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Cao, MG,Chen, YS,Sun, JR,et al. Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices[J]. APPLIED PHYSICS LETTERS,2012,101(20).
APA Cao, MG.,Chen, YS.,Sun, JR.,Shang, DS.,Liu, LF.,...&Shen, BG.(2012).Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices.APPLIED PHYSICS LETTERS,101(20).
MLA Cao, MG,et al."Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices".APPLIED PHYSICS LETTERS 101.20(2012).

入库方式: OAI收割

来源:物理研究所

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