Nonvolatile resistive switching in single crystalline ZnO nanowires
文献类型：期刊论文
| 作者 | Yang, YC ; Zhang, XX ; Gao, M ; Zeng, F ; Zhou, WY ; Xie, SS ; Pan, F |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2011 |
| 卷号 | 3期号:4页码:1917 |
| 关键词 | NANOROD ARRAYS MEMORY DEVICES CHALLENGES RESISTANCE SCIENCE SERIES FILMS |
| ISSN号 | 2040-3364 |
| 通讯作者 | Gao, M (reprint author), Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China. |
| 中文摘要 | We demonstrate nonvolatile resistive switching in single crystalline ZnO nanowires with high ON/OFF ratios and low threshold voltages. Unlike the mechanism of continuous metal filament formation along grain boundaries in polycrystalline films, the resistive switching in single crystalline ZnO nanowires is speculated to be induced by the formation of a metal island chain on the nanowire surface. Resistive memories based on bottom-up semiconductor nanowires hold potential for next generation ultra-dense nonvolatile memories. |
| 收录类别 | SCI |
| 资助信息 | National Hi-tech (R&D) project of China [2009AA034001]; National Natural Science foundation of China [50772055, 50871060, 50702002, 90921012]; National Basic Research Program of China [2005CB623602, 2010CB832905]; Chinese Academy of Sciences [KJCX2-YW-M01] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50014]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, YC,Zhang, XX,Gao, M,et al. Nonvolatile resistive switching in single crystalline ZnO nanowires[J]. NANOSCALE,2011,3(4):1917. |
| APA | Yang, YC.,Zhang, XX.,Gao, M.,Zeng, F.,Zhou, WY.,...&Pan, F.(2011).Nonvolatile resistive switching in single crystalline ZnO nanowires.NANOSCALE,3(4),1917. |
| MLA | Yang, YC,et al."Nonvolatile resistive switching in single crystalline ZnO nanowires".NANOSCALE 3.4(2011):1917. |
入库方式： OAI收割
来源：物理研究所
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