N-plasma assisted molecular beam epitaxy of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar)
文献类型:期刊论文
作者 | Xue, QZ ; Xue, QK ; Kuwano, S ; Nakayama, K ; Sakurai, T |
刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
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出版日期 | 2001 |
卷号 | 40期号:6B页码:4388 |
关键词 | HOMOEPITAXIAL GROWTH 6H-SIC(0001) SURFACE GAN MORPHOLOGY GAN(0001) SUBSTRATE POLARITY RECONSTRUCTIONS HYDROGEN LAYERS |
ISSN号 | 0021-4922 |
通讯作者 | Xue, QZ (reprint author), Tohoku Univ, Inst Mat Res, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan. |
中文摘要 | The three-dimensional (3D) structure of the wild-type rabbit hemorrhagic disease virus (RHDV) has been determined to a resolution of 3.2 nm by electron cryomicroscopy and computer image reconstruction techniques. The 3D density map exhibits characteristic structural features of a calicivirus: a T=3 icosahedral capsid with 90 arch-like capsomeres at the icosahedral and local 2-fold axes and 32 large surface hollows at the icosahedral 5- and 3-fold axes. This result confirms that the RHDV isolated in China is a member of the Caliciviridae family. A rather continuous capsid shell was found without channels. However, our RHDV structure also reveals some distinct structural characteristics not observed in other caliciviruses, including interconnected capsomeres and the lack of protuberance on the base of each of the surface hollows. Two types of particles were identified with similar outer capsid structure but different density distributions inside the capsid shells, which could not be distinguished by conventional negative staining electron microscopy. As the genomic and subgenomic RNAs are both packaged into particles for RHDV, we suggest that the two types of particles identified correspond to those containing either the genomic or subgenomic RNAs, respectively. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/50052] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Xue, QZ,Xue, QK,Kuwano, S,et al. N-plasma assisted molecular beam epitaxy of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar)[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2001,40(6B):4388. |
APA | Xue, QZ,Xue, QK,Kuwano, S,Nakayama, K,&Sakurai, T.(2001).N-plasma assisted molecular beam epitaxy of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar).JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,40(6B),4388. |
MLA | Xue, QZ,et al."N-plasma assisted molecular beam epitaxy of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar)".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40.6B(2001):4388. |
入库方式: OAI收割
来源:物理研究所
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