Numerical analysis of the transport processes in manganite-titanate Schottky junctions
文献类型：期刊论文
| 作者 | Han, P ; Jia, JF ; He, M |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2009 |
| 卷号 | 255期号:12页码:6262 |
| 关键词 | NB-DOPED SRTIO3 BARRIER DIODES HETEROJUNCTION PROPERTY |
| ISSN号 | 0169-4332 |
| 通讯作者 | Han, P (reprint author), Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China. |
| 中文摘要 | A numerical study is presented on the transport processes in the manganite-titanate Schottky junction by using the Poisson equation, the drift-diffusion formulas, the direct and thermally assisted tunneling model. Comparing with the experimental data, it is found that the non-monotonically temperature-dependent I-V curves under reverse bias is caused by the competition between the direct and thermally assisted tunneling processes. In addition, it is also found that the electric field dependence of the permittivity in Nb-doped SrTiO(3) plays an important role on the transport properties of the manganite titanate Schottky junctions based on our calculation. (C) 2009 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50077]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, P,Jia, JF,He, M. Numerical analysis of the transport processes in manganite-titanate Schottky junctions[J]. APPLIED SURFACE SCIENCE,2009,255(12):6262. |
| APA | Han, P,Jia, JF,&He, M.(2009).Numerical analysis of the transport processes in manganite-titanate Schottky junctions.APPLIED SURFACE SCIENCE,255(12),6262. |
| MLA | Han, P,et al."Numerical analysis of the transport processes in manganite-titanate Schottky junctions".APPLIED SURFACE SCIENCE 255.12(2009):6262. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。