Numerical designing of semiconductor structure for optothermionic refrigeration
文献类型:期刊论文
作者 | Han, P ; Jin, KJ ; Zhou, YL ; Lu, HB ; Yang, GZ |
刊名 | JOURNAL OF APPLIED PHYSICS |
出版日期 | 2007 |
卷号 | 101期号:1 |
ISSN号 | 0021-8979 |
关键词 | MULTILAYER THERMIONIC REFRIGERATION QUANTUM-WELLS AUGER RECOMBINATION HETEROSTRUCTURES SIMULATION TRANSPORT EPITAXY INP |
通讯作者 | Jin, KJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China. |
中文摘要 | The cooling processes in the system of AlxIn1- As-x/InP/AlxIn1-xAs are analyzed with a self-consistent calculation based on the model of optothermionic refrigeration. The refrigeration heat as several W/cm(2) is obtained theoretically with the optimal parameters of the aluminum atom fraction x and the doping density for the system. Due to the small Auger coefficient and the lower carriers' density in the InP well, the Auger dissipation heat in the present system is smaller than that in the system of AlGaAs/GaAs/AlGaAs. Furthermore, the applied bias range for obtaining high cooling heat in the present system is calculated to be larger than that in the system of GaAs. For obtaining larger cooling heat, a double-well system of AlxIn(1-x)As/InP/AlxIn(1-x)As/InP/AlxIn1-xAs is designed, in which the maximum cooling heat is predicted as about 50% higher than that in a single-well system of AlxIn1-xAs/InP/AlxIn(1-x)As. (c) 2007 American Institute of Physics. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/50080] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Han, P,Jin, KJ,Zhou, YL,et al. Numerical designing of semiconductor structure for optothermionic refrigeration[J]. JOURNAL OF APPLIED PHYSICS,2007,101(1). |
APA | Han, P,Jin, KJ,Zhou, YL,Lu, HB,&Yang, GZ.(2007).Numerical designing of semiconductor structure for optothermionic refrigeration.JOURNAL OF APPLIED PHYSICS,101(1). |
MLA | Han, P,et al."Numerical designing of semiconductor structure for optothermionic refrigeration".JOURNAL OF APPLIED PHYSICS 101.1(2007). |
入库方式: OAI收割
来源:物理研究所
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