Numerical simulation of nc-Si : H/c-Si heterojunction solar cells
文献类型：期刊论文
| 作者 | Hu, ZH ; Liao, XB ; Zeng, XB ; Xu, YY ; Zhang, SB ; Diao, HW ; Kong, GL |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2003 |
| 卷号 | 52期号:1页码:217 |
| 关键词 | SILICON HETEROJUNCTION LAYER |
| ISSN号 | 1000-3290 |
| 通讯作者 | Hu, ZH (reprint author), Chinese Acad Sci, State Lab Surface Phys, Inst Semiconductor, Beijing 100083, Peoples R China. |
| 中文摘要 | AMPS simulator, which was developed by Pennsylvania State University, has been used to simulate photovoltaic performances of nc-Si:H/c-Si solar cells. It is shown that interface states are essential factors prominently influencing open circuit voltages (V-OC) and fill factors (FF) of these structured solar cells. Short circuit current density (J(SC)) or spectral response seems more sensitive to the thickness of intrinsic a-Si:H buffer layers inserted into n(+)-nc-Si:H layer and p-c-Si substrates. Impacts of bandgap offset on solar cell performances have also been analyzed. As DeltaE(C) increases, degradation of VOC and FF owing to interface states are dramatically recovered. This implies that the interface state cannot merely be regarded as carrier recombination centres, and impacts of interfacial layer on devices need further investigation. Theoretical maximum efficiency of up to 31.17% (AM1.5,100mW/cm(2), 0.40-1.1mum) has been obtained with BSF structure, idealized light-trapping effect(R-F=0, R-B=1) and no interface states. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50093]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Hu, ZH,Liao, XB,Zeng, XB,et al. Numerical simulation of nc-Si : H/c-Si heterojunction solar cells[J]. ACTA PHYSICA SINICA,2003,52(1):217. |
| APA | Hu, ZH.,Liao, XB.,Zeng, XB.,Xu, YY.,Zhang, SB.,...&Kong, GL.(2003).Numerical simulation of nc-Si : H/c-Si heterojunction solar cells.ACTA PHYSICA SINICA,52(1),217. |
| MLA | Hu, ZH,et al."Numerical simulation of nc-Si : H/c-Si heterojunction solar cells".ACTA PHYSICA SINICA 52.1(2003):217. |
入库方式： OAI收割
来源：物理研究所
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