Observation of harmonic current oscillations on partially oxidized Si(111) surfaces by scanning tunneling microscopy
文献类型：期刊论文
| 作者 | Xie, FQ ; von Blanckenhagen, P |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1999 |
| 卷号 | 75期号:20页码:3144 |
| 关键词 | ELECTRON TRAPPING DEFECTS SILICON RESISTANCE TRAPS |
| ISSN号 | 0003-6951 |
| 通讯作者 | von Blanckenhagen, P (reprint author), Forschungszentrum Karlsruhe, Inst Nanotechnol, Postfach 3640, D-76021 Karlsruhe, Germany. |
| 中文摘要 | Spin valve multilayers exhibiting enhanced giant magnetoresistive (GMR) effect and weak interlayer coupling as well as strong exchange biasing were fabricated by a two-step deposition procedure. The down sublayers (i.e., buffer layer Ta/free layer NiFe/interlayer Cu) were deposited at a lower argon pressure, then the upper sublayers (i.e., pinned layer NiFe/pinning layer FeMn/cover layer Ta) were deposited at a higher argon pressure. The former promoted formation of the strong (111) textures, smooth interfaces, and dense Cu film, resulting in a weak interlayer coupling. The latter promoted small domains and less diffusive interfaces, resulting in a strong exchange biasing and an enhanced GMR ratio. This shows that independent control of magnetoresistance, interlayer coupling, and exchange biasing is possible. (C) 1999 American Institute of Physics. [S0021-8979(99)06518-4]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50151]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xie, FQ,von Blanckenhagen, P. Observation of harmonic current oscillations on partially oxidized Si(111) surfaces by scanning tunneling microscopy[J]. APPLIED PHYSICS LETTERS,1999,75(20):3144. |
| APA | Xie, FQ,&von Blanckenhagen, P.(1999).Observation of harmonic current oscillations on partially oxidized Si(111) surfaces by scanning tunneling microscopy.APPLIED PHYSICS LETTERS,75(20),3144. |
| MLA | Xie, FQ,et al."Observation of harmonic current oscillations on partially oxidized Si(111) surfaces by scanning tunneling microscopy".APPLIED PHYSICS LETTERS 75.20(1999):3144. |
入库方式： OAI收割
来源：物理研究所
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