中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Observation of momentum space semi-localization in Si-doped beta-Ga2O3

文献类型:期刊论文

作者Richard, P ; Sato, T ; Souma, S ; Nakayama, K ; Liu, HW ; Iwaya, K ; Hitosugi, T ; Aida, H ; Ding, H ; Takahashi, T
刊名APPLIED PHYSICS LETTERS
出版日期2012
卷号101期号:23
关键词RAMAN-SCATTERING SINGLE-CRYSTALS BI2SR2CACU2O8+DELTA ABSORPTION NANORODS SYSTEMS GROWTH EDGE
ISSN号0003-6951
通讯作者Richard, P (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要We performed an angle-resolved photoemission spectroscopy study of Si-doped beta-Ga2O3. We observed very small photoemission intensity near the Fermi level corresponding to non-dispersive states assigned to Si impurities. We show evidence for a quantization of these states that is accompanied by a confinement in the momentum space consistent with a real-space finite confinement observed in a previous scanning tunneling microscopy study. Our results suggest that this semi-localization in the conjugate spaces plays a crucial role in the electronic conduction of this material. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769109]
收录类别SCI
资助信息Chinese Academy of Sciences [2010Y1JB6]; Ministry of Science and Technology of China [2010CB923000, 2011CBA0010]; Nature Science Foundation of China [10974175, 11004232, 11050110422]; Japan Society for the Promotion of Sciences; MEXT of Japan; University of Wisconsin-Madison; University of Wisconsin-Milwaukee
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/50162]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Richard, P,Sato, T,Souma, S,et al. Observation of momentum space semi-localization in Si-doped beta-Ga2O3[J]. APPLIED PHYSICS LETTERS,2012,101(23).
APA Richard, P.,Sato, T.,Souma, S.,Nakayama, K.,Liu, HW.,...&Takahashi, T.(2012).Observation of momentum space semi-localization in Si-doped beta-Ga2O3.APPLIED PHYSICS LETTERS,101(23).
MLA Richard, P,et al."Observation of momentum space semi-localization in Si-doped beta-Ga2O3".APPLIED PHYSICS LETTERS 101.23(2012).

入库方式: OAI收割

来源:物理研究所

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