Observation of step configuration conversion on single-domain Si(001) 1x2 surface by scanning tunneling microscope
文献类型：期刊论文
| 作者 | Zhou, JM ; Lin, N ; Guo, LW ; Zhang, MH ; Huang, Q ; Cue, N ; Chen, T |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1996 |
| 卷号 | 69期号:22页码:3336 |
| 关键词 | BY-LAYER GROWTH SI(100) STRESS STRAIN GE ROUGHNESS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Zhou, JM (reprint author), CHINESE ACAD SCI,INST PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | An atomic force microscope (AFM) was used to study the growth mechanism of ultrathin YBa2Cu3O7 (YBCO) films with thicknesses of 2.5 nm, 7.5 nm, 12.5 nm and 25 nm. The YBCO films were grown on SrTiO3 (100) crystal substrates with and without a 40 nm thick buffer layer of PrBa2Cu3O7 (PBCO) respectively. The AFM data indicated that the films grew with spiral and layer by layer growth modes, with screw dislocations being the typical spiral growth modes. Three kinds of screw dislocation were found on the 7.5 nm thick films with buffer layer. Two of them showed constant terrace heights, which were 0.6 nm and 1.1 nm respectively, and the third kind of screw dislocation showed a combination of three different terrace heights of 1.6 nm, 1.0 nm and 0.6 nm. All of the screw dislocations had a common feature: the top of the screw dislocation had a columnar core and the height was four times greater than the length of the unit cell along the c-axis. Moreover, the heights of the terraces in all three kinds of screw dislocation were 0.6 nm or multiples of this value. This is approximately half the c-axis lattice parameter of YBCO, suggesting a two-dimensional growth mode along the film plane. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50178]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhou, JM,Lin, N,Guo, LW,et al. Observation of step configuration conversion on single-domain Si(001) 1x2 surface by scanning tunneling microscope[J]. APPLIED PHYSICS LETTERS,1996,69(22):3336. |
| APA | Zhou, JM.,Lin, N.,Guo, LW.,Zhang, MH.,Huang, Q.,...&Chen, T.(1996).Observation of step configuration conversion on single-domain Si(001) 1x2 surface by scanning tunneling microscope.APPLIED PHYSICS LETTERS,69(22),3336. |
| MLA | Zhou, JM,et al."Observation of step configuration conversion on single-domain Si(001) 1x2 surface by scanning tunneling microscope".APPLIED PHYSICS LETTERS 69.22(1996):3336. |
入库方式： OAI收割
来源：物理研究所
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