中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optical in situ monitoring of complex oxide thin film laser molecular beam epitaxy

文献类型:期刊论文

作者Chen, F ; Lu, HB ; Zhao, T ; Chen, ZH ; Yang, GZ
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2001
卷号227页码:950
ISSN号0022-0248
关键词POLARIZED REFLECTANCE SPECTROSCOPY GROWTH SURFACE OSCILLATIONS SRTIO3 GAAS MBE
通讯作者Yang, GZ (reprint author), Chinese Acad Sci, Inst Phys, Ctr Condense Matter Phys, Lab Opt Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要We report the optical in situ monitoring results of the laser molecular beam epitaxial growth of complex oxide thin films using an oblique-incidence reflectance difference (OIRD) technique. The sub-monolayer sensitivity, optical interference oscillations, monolayer response observed for heteroepitaxy, and the surface kinetics study of OIRD measurement are presented. By using a four-layer stack model, the interference oscillations and the monolayer response are reproduced with Fresnel's formulas for multi-layers. (C) 2001 Elsevier Science B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/50302]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Chen, F,Lu, HB,Zhao, T,et al. Optical in situ monitoring of complex oxide thin film laser molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2001,227:950.
APA Chen, F,Lu, HB,Zhao, T,Chen, ZH,&Yang, GZ.(2001).Optical in situ monitoring of complex oxide thin film laser molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,227,950.
MLA Chen, F,et al."Optical in situ monitoring of complex oxide thin film laser molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 227(2001):950.

入库方式: OAI收割

来源:物理研究所

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