Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Wu, SD ; Wang, WX ; Guo, LW ; Li, ZH ; Shang, XZ ; Liu, F ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2005 |
| 卷号 | 278期号:1-4页码:548 |
| ISSN号 | 0022-0248 |
| 关键词 | VAPOR-PHASE EPITAXY INTERFACE ROUGHNESS ALGAAS PHOTOLUMINESCENCE HETEROSTRUCTURES QUALITY DIODES MBE SB |
| 通讯作者 | Zhou, JM (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The influence of antimony (Sb) incorporation on the optical properties of AlAs/GaAs quantum wells (QWs) grown by solid source molecular beam epitaxy (SSMBE) has been investigated by room- and low-temperature photoluminescence (PL) measurements. Various Sb fluxes are used in an growing AlAs barrier layer. The room- and low-temperature PL measurements showed that incorporation of a very small amount of Sb doping can decrease the PL linewidths and increase the PL intensity of AlAs/GaAs QWs drastically, which indicates that Sb improves the interface and crystal quality as both a surfactant and an isoelectronic dopant in AlAs. However, the PL intensity reduces, and full-width at half-maximum (FWHM) of QWs increases with the increase of Sb flux, indicating that a little high concentration of Sb incorporated into the alloy and degrades the interfacial and crystalline quality. It is attributed to the strain-induced defects in the barrier layers of AlAs. Moreover, we also use the infinite square potential well model to study the relation of the interface roughness and FWHM. © 2005 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50324]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, SD,Wang, WX,Guo, LW,et al. Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2005,278(1-4):548. |
| APA | Wu, SD.,Wang, WX.,Guo, LW.,Li, ZH.,Shang, XZ.,...&Zhou, JM.(2005).Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,278(1-4),548. |
| MLA | Wu, SD,et al."Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 278.1-4(2005):548. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。