Optical properties of boron-doped Si nanowires
文献类型：期刊论文
| 作者 | Zeng, XB ; Liao, XB ; Wang, B ; Dai, ST ; Xu, YY ; Xiang, XB ; Hu, ZH ; Diao, HW ; Kong, GL |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2004 |
| 卷号 | 265期号:1-2页码:94 |
| 关键词 | SILICON NANOWIRES POROUS SILICON VISIBLE PHOTOLUMINESCENCE AMORPHOUS-SILICON RAMAN SPECTROSCOPY NANOSTRUCTURES EMISSION GROWTH FILMS |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zeng, XB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, POB 912, Beijing 100083, Peoples R China. |
| 中文摘要 | Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The as-grown films were studied by atomic force microscope (AFM), High-resolution X-ray diffraction (XRD) and Hall measurements. The structural and electronic transport properties of the films were in-plane anisotropic. The formation mechanism of anisotropic properties was discussed. (C) 2004 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/50328]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zeng, XB,Liao, XB,Wang, B,et al. Optical properties of boron-doped Si nanowires[J]. JOURNAL OF CRYSTAL GROWTH,2004,265(1-2):94. |
| APA | Zeng, XB.,Liao, XB.,Wang, B.,Dai, ST.,Xu, YY.,...&Kong, GL.(2004).Optical properties of boron-doped Si nanowires.JOURNAL OF CRYSTAL GROWTH,265(1-2),94. |
| MLA | Zeng, XB,et al."Optical properties of boron-doped Si nanowires".JOURNAL OF CRYSTAL GROWTH 265.1-2(2004):94. |
入库方式： OAI收割
来源：物理研究所
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